TMS28F010B Datasheet: 131072 BY 8-BIT FLASH MEMORY





TMS28F010B 131072 BY 8-BIT FLASH MEMORY Datasheet

Part Number TMS28F010B
Description 131072 BY 8-BIT FLASH MEMORY
Manufacture etcTI
Total Page 23 Pages
PDF Download Download TMS28F010B Datasheet PDF

Features: D Organization . . . 131 072 by 8 Bits D Pin Compatible With Existing 1-Megabit EPROMs D VCC Tolerance ±10% D All Inp uts / Outputs TTL Compatible D Maximum Access / Minimum Cycle Time ’28F010B- 90 90 ns ’28F010B-10 100 ns ’28F010 B-12 120 ns ’28F010B-15 150 ns D Indu stry-Standard Programming Algorithm D P EP4 Version Available With 168-Hour Bur n-In, and Choice of Operating Temperatu re Ranges D 100000 and 10 000 Program / Erase-Cycle Versions Available D Latch up Immunity of 250 mA on All Input and Output Lines D Low Power Dissipation ( VCC = 5.5 V ) –Active Write . . . 55 mW –Active Read . . . 165 mW –Elect rical Erase . . . 82.5 mW –Standby . . . 0.55 mW (CMOS-Input Levels) D Autom otive Temperature Range – 40°C to 12 5°C description TMS28F010B 131072 BY 8-BIT FLASH MEMORY SMJS824B – MAY 199 5 – REVISED AUGUST 1997 FM PACKAGE ( TOP VIEW ) A12 A15 A16 VPP VCC W NC A 7 A6 A5 A4 A3 A2 A1 A0 DQ0 4 3 2 1 32 31 30 5 29 6 28 7 27 8 26 9 25 10 24 11 23 12 22 13 21 14 15 16 17 18 19 20 A14 A13 A8 .

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D Organization . . . 131 072 by 8 Bits
D Pin Compatible With Existing 1-Megabit
EPROMs
D VCC Tolerance ±10%
D All Inputs / Outputs TTL Compatible
D Maximum Access / Minimum Cycle Time
’28F010B-90 90 ns
’28F010B-10 100 ns
’28F010B-12 120 ns
’28F010B-15 150 ns
D Industry-Standard Programming Algorithm
D PEP4 Version Available With 168-Hour
Burn-In, and Choice of Operating
Temperature Ranges
D 100000 and 10 000 Program / Erase-Cycle
Versions Available
D Latchup Immunity of 250 mA on All Input
and Output Lines
D Low Power Dissipation ( VCC = 5.5 V )
–Active Write . . . 55 mW
–Active Read . . . 165 mW
–Electrical Erase . . . 82.5 mW
–Standby . . . 0.55 mW
(CMOS-Input Levels)
D Automotive Temperature Range
– 40°C to 125°C
description
TMS28F010B
131072 BY 8-BIT
FLASH MEMORY
SMJS824B – MAY 1995 – REVISED AUGUST 1997
FM PACKAGE
( TOP VIEW )
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
4 3 2 1 32 31 30
5 29
6 28
7 27
8 26
9 25
10 24
11 23
12 22
13 21
14 15 16 17 18 19 20
A14
A13
A8
A9
A11
G
A10
E
DQ7
PIN NOMENCLATURE
A0 – A16
DQ0 – DQ7
E
G
NC
VCC
VPP
VSS
W
Address Inputs
Inputs (programming) / Outputs
Chip Enable
Output Enable
No Internal Connection
5-V Power Supply
12-V Power Supply†
Ground
Write Enable
Only in Program Mode
The TMS28F010B is a 131 072 by 8 bit (104 8 576-bit), programmable read-only memory that can be electrically
bulk-erased and reprogrammed. It is available in 100 000 and 10 000 program / erase-endurance-cycle
versions.
The TMS28F010B Flash Memory is offered in a 32-lead plastic leaded chip-carrier package (shown above)
using 1,25-mm (50-mil) lead spacing ( FM suffix), a 32-lead thin small-outline package ( DD suffix), and a reverse
pinout TSOP package ( DU suffix)both shown on the following page.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1997, Texas Instruments Incorporated
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
1

                    
                    






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