TMS28F210 Datasheet: 65536 BY 16-BIT FLASH MEMORY





TMS28F210 Datasheet PDF

Part Number TMS28F210
Description 65536 BY 16-BIT FLASH MEMORY
Manufacture etcTI
Total Page 25 Pages
PDF Download Download TMS28F210 Datasheet PDF

Features: D Organization . . . 65 536 by 16-Bits D Pin Compatible With Existing 1-Megabit EPROMs D All Inputs/Outputs TTL Compat ible D VCC Tolerance ±10% D Maximum Ac cess/Minimum Cycle Time ’28F210-10 10 0 ns ’28F210-12 120 ns ’28F210-15 1 50 ns ’28F210-17 170 ns D Industry-St andard Programming Algorithm D PEP4 Ver sion Available With 168-Hour Burn-In an d Choice of Operating Temperature Range s D 10000 and 1 000 Program/Erase Cycle s D Latchup Immunity of 250 mA on All I nput and Output Lines D Low Power Dissi pation ( VCC = 5.5 V ) – Active Write . . . 55 mW – Active Read . . . 165 mW – Electrical Erase . . . 82.5 mW Standby . . . 0.55 mW (CMOS-Input Le vels) D Automotive Temperature Range 40°C to 125°C DQ3 DQ2 DQ1 DQ0 G NC A0 A1 A2 A3 A4 TMS28F210 65536 BY 16- BIT FLASH MEMORY SMJS210D – DECEMBER 1992 – REVISED AUGUST 1997 FN PACKAGE ( TOP VIEW ) DQ13 DQ14 DQ15 E VPP NC VCC W NC A15 A14 DQ12 DQ11 DQ10 DQ9 DQ 8 VSS NC DQ7 DQ6 DQ5 DQ4 6543 7 8 9 10 11 12 13 14 15 16 17 2 1 44 43 42 41 40 39 38 3.

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TMS28F210 datasheet
D Organization . . . 65 536 by 16-Bits
D Pin Compatible With Existing 1-Megabit
EPROMs
D All Inputs/Outputs TTL Compatible
D VCC Tolerance ±10%
D Maximum Access/Minimum Cycle Time
’28F210-10 100 ns
’28F210-12 120 ns
’28F210-15 150 ns
’28F210-17 170 ns
D Industry-Standard Programming Algorithm
D PEP4 Version Available With 168-Hour
Burn-In and Choice of Operating
Temperature Ranges
D 10000 and 1 000 Program/Erase Cycles
D Latchup Immunity of 250 mA on All Input
and Output Lines
D Low Power Dissipation ( VCC = 5.5 V )
– Active Write . . . 55 mW
– Active Read . . . 165 mW
– Electrical Erase . . . 82.5 mW
– Standby . . . 0.55 mW
(CMOS-Input Levels)
D Automotive Temperature Range
– 40°C to 125°C
TMS28F210
65536 BY 16-BIT
FLASH MEMORY
SMJS210D – DECEMBER 1992 – REVISED AUGUST 1997
FN PACKAGE
( TOP VIEW )
DQ12
DQ11
DQ10
DQ9
DQ8
VSS
NC
DQ7
DQ6
DQ5
DQ4
6543
7
8
9
10
11
12
13
14
15
16
17
2 1 44 43 42 41 40
39
38
37
36
35
34
33
32
31
30
29
18 19 20 21 22 23 24 25 26 27 28
A13
A12
A11
A10
A9
VSS
NC
A8
A7
A6
A5
description
The TMS28F210 is a 65 536 by 16-bit (1048 576-bit), programmable read-only memory that can be electrically
bulk-erased and reprogrammed. It is available in 10 000- and 1 000-program/erase-endurance-cycle versions.
The TMS28F210 flash memory is offered in a 44-lead plastic leaded chip carrier package using 1,25 mm
(50-mil) lead spacing (FN suffix), and a 40-lead thin small-outline package (DBW suffix).
The TMS28F210 is characterized for operation in temperature ranges of 0°C to 70°C, – 40°C to 85°C, and
– 40°C to 125°C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1997, Texas Instruments Incorporated
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
1

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