TMS416169 Datasheet: 1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS





TMS416169 Datasheet PDF

Part Number TMS416169
Description 1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS
Manufacture etcTI
Total Page 26 Pages
PDF Download Download TMS416169 Datasheet PDF

Features: TMS416169, TMS418169 1048576-WORD BY 16- BIT EXTENDED DATA OUT HIGH-SPEED DRAMS D Organization . . . 1 048576 Words by 16 Bits D Single 5-V Power Supply D Pe rformance Ranges: ACCESS ACCESS ACCESS READ OR TIME TIME TIME EDO tRAC MAX tCAC MAX tAA MAX CYCLE MIN ’41x1 69/P-60 60 ns 15 ns 30 ns 25 ns ’41x 169/P-70 70 ns 18 ns 35 ns 30 ns ’41 x169/P-80 80 ns 20 ns 40 ns 35 ns D Ext ended-Data-Out (EDO) Operation D xCAS-B efore-RAS ( xCBR) Refresh D RAS-Only Re fresh – 1 024-Cycle Refresh in 16 ms (TMS418169) – 4 096-Cycle Refresh in 64 ms (TMS416169) D 3-State Unlatch ed Output D High-Reliability Plastic 42 -Lead (DZ Suffix) 400-Mil-Wide Surface -Mount (SOJ) Package D Operating Free- Air Temperature Range 0°C to 70°C D T exas Instruments Enhanced Performance I mplanted CMOS (EPIC™) Process SMKS88 6C – MAY1995 – REVISED MARCH 1996 D Z PACKAGE ( TOP VIEW ) VCC DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 NC NC W RAS A1 1† A10† A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 4.

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TMS416169 datasheet
TMS416169, TMS418169
1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS
D Organization . . . 1 048576 Words by 16 Bits
D Single 5-V Power Supply
D Performance Ranges:
ACCESS ACCESS ACCESS READ OR
TIME TIME TIME
EDO
tRAC
MAX
tCAC
MAX
tAA
MAX
CYCLE
MIN
’41x169/P-60 60 ns 15 ns 30 ns 25 ns
’41x169/P-70 70 ns 18 ns 35 ns 30 ns
’41x169/P-80 80 ns 20 ns 40 ns 35 ns
D Extended-Data-Out (EDO) Operation
D xCAS-Before-RAS ( xCBR) Refresh
D RAS-Only Refresh
– 1 024-Cycle Refresh in 16 ms
(TMS418169)
– 4 096-Cycle Refresh in 64 ms
(TMS416169)
D 3-State Unlatched Output
D High-Reliability Plastic 42-Lead (DZ
Suffix) 400-Mil-Wide Surface-Mount (SOJ)
Package
D Operating Free-Air Temperature Range
0°C to 70°C
D Texas Instruments Enhanced Performance
Implanted CMOS (EPIC) Process
SMKS886C – MAY1995 – REVISED MARCH 1996
DZ PACKAGE
( TOP VIEW )
VCC
DQ0
DQ1
DQ2
DQ3
VCC
DQ4
DQ5
DQ6
DQ7
NC
NC
W
RAS
A11
A10
A0
A1
A2
A3
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42 VSS
41 DQ15
40 DQ14
39 DQ13
38 DQ12
37 VSS
36 DQ11
35 DQ10
34 DQ9
33 DQ8
32 NC
31 LCAS
30 UCAS
29 OE
28 A9
27 A8
26 A7
25 A6
24 A5
23 A4
22 VSS
description
A10 and A11 are NC for TMS418169.
The TMS418169 and the TMS416169 are
high-speed, 16 777 216-bit dynamic random-ac-
cess memories (DRAMs) organized as 1 048 576
words of 16 bits each. Both devices employ
state-of-the-art EPIC technology for high perform-
ance, reliability, and low power at low cost.
These devices feature maximum RAS access
times of 60 ns, 70 ns, and 80 ns. All addresses and
data-in lines are latched on-chip to simplify
system design. Data out is unlatched to allow
greater system flexibility.
PIN NOMENCLATURE
A0 – A11
DQ0 – DQ15
LCAS
UCAS
NC
OE
RAS
VCC
VSS
W
Address Inputs
Data In / Data Out
Lower Column-Address Strobe
Upper Column-Address Strobe
No Internal Connection
Output Enable
Row-Address Strobe
5-V Supply
Ground
Write Enable
The TMS416169 and TMS418169 are offered in a 42-lead plastic surface-mount SOJ (DZ suffix) package. The
package is characterized for operation from 0°C to 70°C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
EPIC is a trademark of Texas Instruments Incorporated.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1996, Texas Instruments Incorporated
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
1

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