TPHR6503PL Datasheet | Silicon N-channel MOSFET





(Datasheet) TPHR6503PL Datasheet PDF Download

Part Number TPHR6503PL
Description Silicon N-channel MOSFET
Manufacture Toshiba
Total Page 10 Pages
PDF Download Download TPHR6503PL Datasheet PDF

Features: MOSFETs Silicon N-channel MOS (U-MOS- H) TPHR6503PL 1. Applications • High- Efficiency DC-DC Converters • Switchi ng Voltage Regulators 2. Features (1) H igh-speed switching (2) Small gate char ge: QSW = 30 nC (typ.) (3) Small output charge: Qoss = 81.3 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 0 .41 mΩ (typ.) (VGS = 10 V) (5) Low le akage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1. 1 to 2.1 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPHR65 03PL SOP Advance 1, 2, 3: Source 4: G ate 5, 6, 7, 8: Drain ©2016 Toshiba C orporation 1 Start of commercial prod uction 2015-11 2016-07-22 Rev.2.0 TPHR 6503PL 4. Absolute Maximum Ratings (No te) (Ta = 25  unless otherwise speci fied) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage (Note 1) VGSS 20 Drain current (DC) (Tc = 25 ) (Note 2) ID 150 A Drain current (DC ) (Silicon limit) (Note 2), (Note 3) ID 393 A Drain current (pulsed) (t =.

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MOSFETs Silicon N-channel MOS (U-MOS-H)
TPHR6503PL
1. Applications
• High-Efficiency DC-DC Converters
• Switching Voltage Regulators
2. Features
(1) High-speed switching
(2) Small gate charge: QSW = 30 nC (typ.)
(3) Small output charge: Qoss = 81.3 nC (typ.)
(4) Low drain-source on-resistance: RDS(ON) = 0.41 m(typ.) (VGS = 10 V)
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
(6) Enhancement mode: Vth = 1.1 to 2.1 V (VDS = 10 V, ID = 1.0 mA)
3. Packaging and Internal Circuit
TPHR6503PL
SOP Advance
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
©2016 Toshiba Corporation
1
Start of commercial production
2015-11
2016-07-22
Rev.2.0

                    
        






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