TPHR8504PL Datasheet | Silicon N-channel MOSFET





(Datasheet) TPHR8504PL Datasheet PDF Download

Part Number TPHR8504PL
Description Silicon N-channel MOSFET
Manufacture Toshiba
Total Page 9 Pages
PDF Download Download TPHR8504PL Datasheet PDF

Features: MOSFETs Silicon N-channel MOS (U-MOS- H) TPHR8504PL 1. Applications • High- Efficiency DC-DC Converters • Switchi ng Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching ( 2) Small gate charge: QSW = 23 nC (typ. ) (3) Small output charge: Qoss = 85.4 nC (typ.) (4) Low drain-source on-resis tance: RDS(ON) = 0.7 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enhanceme nt mode: Vth = 1.4 to 2.4 V (VDS = 10 V , ID = 1.0 mA) 3. Packaging and Interna l Circuit TPHR8504PL SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start o f commercial production 2014-06 2016-10 -19 Rev.3.0 TPHR8504PL 4. Absolute Ma ximum Ratings (Note) (Ta = 25  unles s otherwise specified) Characteristics Symbol Rating Unit Drain-source vo ltage VDSS 40 V Gate-source voltage VGSS ±20 Drain current (DC) (Tc = 2 5 ) (Note 1), (Note 2) ID 150 A D rain current (DC) (Silicon limit) (Note 1), (Note 2) ID 340 A Drain current .

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MOSFETs Silicon N-channel MOS (U-MOS-H)
TPHR8504PL
1. Applications
• High-Efficiency DC-DC Converters
• Switching Voltage Regulators
• Motor Drivers
2. Features
(1) High-speed switching
(2) Small gate charge: QSW = 23 nC (typ.)
(3) Small output charge: Qoss = 85.4 nC (typ.)
(4) Low drain-source on-resistance: RDS(ON) = 0.7 m(typ.) (VGS = 10 V)
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)
(6) Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 1.0 mA)
3. Packaging and Internal Circuit
TPHR8504PL
SOP Advance
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
©2016 Toshiba Corporation
1
Start of commercial production
2014-06
2016-10-19
Rev.3.0

                    
     






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