DMOS Array. TPIC1301 Datasheet

TPIC1301 Array. Datasheet pdf. Equivalent

Part TPIC1301
Description 3-Half H-Bridge Gate-Protected Power DMOS Array
Feature ą TPIC1301 3ĆHALF HĆBRIDGE GATEĆPROTECTED POWER DMOS ARRAY SLIS037 − NOVEMBER 1994 • Low rDS(on) . .
Manufacture etcTI
Total Page 14 Pages
Datasheet
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TPIC1301
ą TPIC1301
3ĆHALF HĆBRIDGE GATEĆPROTECTED
POWER DMOS ARRAY
SLIS037 − NOVEMBER 1994
Low rDS(on) . . . 0.23 Typ
High Voltage Output . . . 60 V
DW PACKAGE
(TOP VIEW)
Extended ESD Capability . . . 4000 V
OUTPUT1 1
24 OUTPUT1
Pulsed Current . . . 11.25 A Per Channel
Fast Commutation Speed
GATE4
SOURCE4
SOURCE4
2
3
4
23 GATE1
22 DRAIN1
21 DRAIN1
description
GND 5
GND 6
20 DRAIN2
19 DRAIN2
The TPIC1301 is a monolithic gate-protected
GATE5 7
18 OUTPUT2
power DMOS array that consists of six electrically
SOURCE6 8
17 OUTPUT2
isolated N-channel enhancement-mode DMOS
SOURCE6 9
16 GATE2
transistors configured as three half H-bridges.
GATE6 10 15 DRAIN3
Each transistor features integrated high-current
zener diodes (ZCXa and ZCXb) to prevent gate
damage in the event that an overstress condition
OUTPUT3 11
OUTPUT3 12
14 DRAIN3
13 GATE3
occurs. These zener diodes also provide up to 4000 V of ESD protection when tested using the human-body
model of a 100-pF capacitor in series with a 1.5-kresistor.
The TPIC1301 is offered in a 24-pin wide-body surface-mount (DW) package and is characterized for operation
over the case temperature range of − 40°C to 125°C.
schematic
21, 22
DRAIN1
23
GATE1
ZC1b
Q1
ZC1a
1, 24
OUTPUT1
OUTPUT2
17, 18
GATE5
7
GATE2 DRAIN2
16 19, 20
Z1
D1
D4
Q2
ZC2b
ZC2a
Z2 Z3
D2 D3
D5
14, 15
DRAIN3
Q3
13
GATE3
ZC3b
ZC3a
11, 12 OUTPUT3
Q4 Q5
2
GATE4
ZC4b
Z4
ZC5b
Z5
ZC4a
SOURCE4 3, 4
ZC5a
5, 6
GND
NOTE: For correct operation, no terminal pin may be taken below GND.
Q6
Z6
10
GATE6
ZC6b
ZC6a
8, 9 SOURCE6
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright 1994, Texas Instruments Incorporated
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443
2−1



TPIC1301
TPIC1301
3ĆHALF HĆBRIDGE GATEĆPROTECTED
POWER DMOS ARRAY
SLIS037 − NOVEMBER 1994
ą
absolute maximum ratings over operating case temperature range (unless otherwise noted)
Drain-to-GND voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Drain-to-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Output-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
SOURCE4, SOURCE6-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Gate-to-source voltage range, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −9 V to 18 V
Continuous drain current, each output, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.25 A
Continuous source-to-drain diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.25 A
Pulsed drain current, each output, Imax, TC = 25°C (see Note 1 and Figure 15) . . . . . . . . . . . . . . . . . 11.25 A
Continuous gate-to-source zener-diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 50 mA
Pulsed gate-to-source zener-diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 500 mA
Single-pule avalanche energy, EAS, TC = 25°C (see Figures 4, 15, and 16) . . . . . . . . . . . . . . . . . . . . 17.2 mJ
Continuous total dissipation, TC = 25°C (see Figure 15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.39 W
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 150°C
Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Pulse duration = 10 ms, duty cycle = 2%
2−2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443





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