DMOS Array. TPIC2202 Datasheet

TPIC2202 Array. Datasheet pdf. Equivalent

Part TPIC2202
Description 2-Channel Common-Source Power DMOS Array
Feature ą TPIC2202 2ĆCHANNEL COMMONĆSOURCE POWER DMOS ARRAY ą SLIS017 − SEPTEMBER 1992 • Two 7.5-A Independ.
Manufacture etcTI
Total Page 11 Pages
Datasheet
Download TPIC2202 Datasheet



TPIC2202
ą TPIC2202
2ĆCHANNEL COMMONĆSOURCE POWER DMOS ARRAY
ą
SLIS017 − SEPTEMBER 1992
Two 7.5-A Independent Output Channels,
Continuous Current Per Channel
Low rDS(on) . . . 0.09 Typical
Output Voltage . . . 60 V
Pulsed Current . . . 15 A Per Channel
Avalanche Energy . . . 120 mJ
KC PACKAGE
(TOP VIEW)
5
4
3
2
1
DRAIN2
GATE2
SOURCE
DRAIN1
GATE1
description
The tab is electrically connected to SOURCE.
The TPIC2202 is a monolithic power DMOS array
that consists of two independent N-channel
enhancement-mode DMOS transistors
connected in a common-source configuration with
open drains.
schematic
DRAIN1
2
DRAIN2
5
GATE1
1
4
GATE2
3
SOURCE
absolute maximum ratings over operating case temperature range (unless otherwise noted)
Drain-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Gate-source voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 20 V
Continuous source-drain diode current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5 A
Pulsed drain current, each output, all outputs on, ID (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 A
Continuous drain current, each output, all outputs on . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5 A
Single-pulse avalanche energy, EAS (see Figure 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 mJ
Continuous power dissipation at (or below) TA = 25°C (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 W
Continuous power dissipation at (or below) TC = 75°C, all outputs on (see Note 2) . . . . . . . . . . . . . . . . 31 W
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 150°C
Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
NOTES:
1. Pulse duration = 10 ms, duty cycle = 6%
2. For operation above 25°C free-air temperature, derate linearly at the rate of 16 mW/°C. For operation above 75°C case temperature,
and with all outputs conducting, derate linearly at the rate of 0.42 W/°C. To avoid exceeding the design maximum virtual junction
temperature, these ratings should not be exceeded.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright 1992, Texas Instruments Incorporated
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443
2−1



TPIC2202
TPIC2202
2ĆCHANNEL COMMONĆSOURCE POWER DMOS ARRAY
ą
SLIS017 − SEPTEMBER 1992
ą
electrical characteristics, TC = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP
V(BR)DS
VTGS
VDS(on)
Drain-source breakdown voltage
Gate-source threshold voltage
Drain-source on-state voltage
IDSS
IGSSF
Zero-gate-voltage drain current
Forward gate current, drain short
circuited to source
ID = 1 µA,
ID = 1 mA,
ID = 7.5 A,
VDS = 48 V,
VGS = 20 V,
VGS = 0
VDS = VGS
VGS = 15 V,
VGS = 0
See Notes 3 and 4
TC = 25°C
TC = 125°C
VDS = 0
60
1.2 1.75
0.68
0.07
1.3
10
IGSSR
Reverse gate current, drain short
circuited to source
VGS = − 20 V, VDS = 0
10
rDS(on)
gfs
Ciss
Static drain-source on-state
resistance
Forward transconductance
Short-circuit input capacitance,
common source
VGS = 15 V, ID = 7.5 A,
See Notes 3 and 4 and Figures 5 and 6
TC = 25°C
TC = 125°C
VDS = 15 V, ID = 5 A,
See Notes 3 and 4
0.09
0.15
2.5 4.7
490
Coss
Short-circuit output capacitance,
common source
VDS = 25 V,
VGS = 0,
f = 300 kHz
285
Crss
Short-circuit reverse transfer
capacitance, common source
90
NOTES: 3. Technique should limit TJ − TC to 10°C maximum.
4. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
MAX
2.4
0.94
1
10
100
100
0.125
0.21
UNIT
V
V
V
µA
nA
nA
S
pF
source-drain diode characteristics, TC = 25°C
PARAMETER
TEST CONDITIONS
VSD
trr
QRR
Forward on voltage
Reverse recovery time
Total source-drain diode charge
IS = 7.5 A, VGS = 0,
di/dt = 100 A/µs,
VDS = 48 V, See Figure 1
MIN TYP MAX UNIT
0.8 1.3 V
200 ns
1.5 µC
resistive-load switching characteristics, TC = 25°C
PARAMETER
TEST CONDITIONS
td(on)
td(off)
tr
tf
Qg
Qgs
Qgd
LD
LS
Turn-on delay time
Turn-off delay time
Rise time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Internal drain inductance
Internal source inductance
VDD = 25 V,
tdis = 10 ns,
RL = 6.7 ,
See Figure 2
ten = 10 ns,
VDD = 48 V, ID = 2.5 A,
See Figure 3
VGS = 10 V,
thermal resistance
RθJA
RθJC
PARAMETER
Junction-to-ambient thermal resistance
Junction-to-case thermal resistance
TEST CONDITIONS
All outputs with equal power
All outputs with equal power
One output dissipating power
MIN TYP MAX UNIT
12
100
ns
43
5
13.6 18
8.3 11 nC
5.3 7
7
nH
7
MIN TYP MAX UNIT
62.5 °C/W
2.4 °C/W
3.3 °C/W
2−2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443





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