U234 Datasheet PDF


Part Number

U234

Description

monolithic dual n-channel JFET

Manufacture

Siliconix

Total Page 1 Pages
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Download U234 Datasheet PDF


Features Datasheet pdf monolithic dual n-channel JFETs designed for • • • • Differential Ampli fiers ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Drain or Gate-Source Voltage _____ _ ••••••••• -50 V Gat e Current ••••••••• •••••••••••• •••••••• 50mA Total De vice Dissipation at 25°C (Derate 1.7 m W/oC to 200°C) ••••••• ••••••• 300mW Storage Te mperature Range ••••••• •••••• -65 to +200°C Lead Temperature (1/16" from case for 10 se conds) •....•••••.••• • 300°C H Siliconix Performance Cu rves NQP See Section 4 BENEFITS • Go od Matching Characteristics TO-71 See Section 6 ~~G, G2 s, S2 0,S2 G, ,0 o·o. °1 '0 10 07 G2 s, Bottom View Gt., 0, ~, ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) Characteristic I-.!.
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U234 Datasheet
monolithic dual
n-channel JFETs
designed for • • •
Differential Amplifiers
ABSOLUTE MAXIMUM RATINGS (25°C)
Gate-Drain or Gate-Source Voltage ______ ••••••••• -50 V
Gate Current ••••••••••••••••••••••••••••••• 50mA
Total Device Dissipation at 25°C
(Derate 1.7 mW/oC to 200°C) ••••••••••••••• 300mW
Storage Temperature Range •••••••••••••• -65 to +200°C
Lead Temperature
(1/16" from case for 10 seconds) •....•••••.•••• 300°C
H
Siliconix
Performance Curves NQP
See Section 4
BENEFITS
Good Matching Characteristics
TO-71
See Section 6
~~G, G2
s, S2
0,S2
G, ,0 o·o.
°1
'0
10
07
G2
s,
Bottom View
Gt., 0,
~,
ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
Characteristic
I-.!.
2
IGSS
13' S BVGSS
1'4
15'
I -"-
T
A
T
I
VGS(o!fl
VGS
6 C IG
1-
7 lOSS
Gate Reverse Current
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Gate-Source Voltage
Gate Operating Current
Saturation Dram Current (Note 1)
8 91,
19
1'iO
I"iT
0
V
N
A
915
9o,
9o,
112
I~
1-
M
I
c
C1SS
Crss
14 en
Common-Source Forward Transconductance (Note 11
Common-Source Forward Transconductance (Note 1)
Common-Source Output Conductance
Common-Source Output Conductance
Common-Source Input Capacitance
Common-Source Reverse Transfer Capacitance
EqUivalent Short CircUit Input Noise Voltage
Min
-50
-05
-0.3
0.5
1000
1000
600
Max
-100
-500
-4.5
-4.0
-50
-250
5.0
5000
1600
35
10
6
2
80
Characteristic
U231 U232 U233 U234 U235
Max Max Max Max Max
Unit Test Conditions
pA
VGS=-30V. VOS=O
nA
150·C
IG=-lI'A.VOS=O
V VOS=20V.10=1 nA
pA
nA
mA
I'mho
VaG = 20 V. 10 = 200 I'A
VOS = 20 V. VGS = 0
VOS = 20V. VGS = 0
VOG = 20 V.IO = 200l'A
VOS = 20 V. VGS = 0
VaG = 20 V.IO = 200l'A
125·C
1= 1 kHz
1= 100MHz
1= 1 kHz
pF
VOS= 20 V. VGS = 0
nV
v'Hz
I B I1= 1 MHz
1= 100 Hz
Unit Test Conditions
15 IIGl-IG2 i
1-
Differential Gate Current
16 (loss1-1OSS2) Saturation Drain Current
1-
IOSSl
Match (Note 1)
17 M iVGS1-VGS2 i
1-
A
T
Differential Gate-Source
Voltage
18 C
I-H
19
I
N
t>iv GS1-V GS2i
t>T
Gate-Source Voltage
Oillerentlal Orilt (Note 2)
- - -1- G (91,1-91,2)
20
1 - 91,1
Transconductance Match
(Note 1)
21
igo,l-9o,2 i
Differential Output
Conductance
10 10 10 10 10
55
5 10 15
nA VOG= 20V.10=200I'A
% VOS=20V. VGS=O
125·C
5 10 15 20 25
mV
10 25 50 75 100
I'vtc
10 25 50 75 100
VaG = 20 V. 10 = 200 I'A
3 5 5 10 15
%
5 5 5 5 5 I'mho
TA = 25·C
TB = 125·C
TA=-55 C
TB = 25·C
1=1 kHz
NOTES:
1. Pulse te,t required. pul,ewidth = 3001's. duty cycle';; 3%.
2. Measured at end point'. TA and TB.
NQP
SilicDnix
3-117




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