DMOS array. TPIC5303 Datasheet

TPIC5303 array. Datasheet pdf. Equivalent

Part TPIC5303
Description power DMOS array
Feature ą TPIC5303 3ĆCHANNEL INDEPENDENT GATEĆPROTECTED POWER DMOS ARRAY SLIS039A − SEPTEMBER 1994 − REVISED.
Manufacture etcTI
Total Page 14 Pages
Datasheet
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TPIC5303
ą TPIC5303
3ĆCHANNEL INDEPENDENT GATEĆPROTECTED
POWER DMOS ARRAY
SLIS039A − SEPTEMBER 1994 − REVISED SEPTEMBER 1995
Low rDS(on) . . . 0.4 Typ
High Voltage Output . . . 60 V
D PACKAGE
(TOP VIEW)
Extended ESD Capability . . . 4000 V
Pulsed Current . . . 5 A Per Channel
Fast Commutation Speed
DRAIN2
DRAIN2
SOURCE2
1
2
3
16 GATE1
15 SOURCE1
14 SOURCE1
description
SOURCE2 4
GATE2 5
13 DRAIN1
12 DRAIN1
The TPIC5303 is a monolithic gate-protected
power DMOS array that consists of three
independent electrically isolated N-channel
DRAIN3
DRAIN3
GND
6
7
8
11 SOURCE3
10 SOURCE3
9 GATE3
enhancement-mode DMOS transistors. Each
transistor features integrated high-current zener
diodes (ZCXa and ZCXb) to prevent gate damage in the event that an overstress condition occurs. These zener
diodes also provide up to 4000 V of ESD protection when tested using the human-body model of a 100-pF
capacitor in series with a 1.5-kresistor.
The TPIC5303 is offered in a standard 16-pin small-outline surface-mount (D) package and is characterized for
operation over the case temperature range of − 40°C to 125°C.
schematic
DRAIN1
12, 13
GATE2
5
DRAIN2
1, 2
GATE3
9
DRAIN3
6, 7
Q1
GATE1 16
ZC1b
ZC1a
D1 Q2
Z1
ZC2b
ZC2a
D2
Z2
Q3
ZC3b
ZC3a
D3
Z3
14, 15
8
SOURCE1 GND
3, 4
SOURCE2
NOTE A: For correct operation, no terminal pin may be taken below GND.
10, 11
SOURCE3
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright 1995, Texas Instruments Incorporated
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443
1



TPIC5303
TPIC5303
3ĆCHANNEL INDEPENDENT GATEĆPROTECTED
POWER DMOS ARRAY
SLIS039A − SEPTEMBER 1994 − REVISED SEPTEMBER 1995
ą
absolute maximum ratings over operating case temperature range (unless otherwise noted)
Drain-to-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Source-to-GND voltage (Q1, Q2, and Q3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Drain-to-GND voltage (Q1, Q2, and Q3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Gate-to-source voltage range, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −9 V to 18 V
Continuous drain current, each output, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4 A
Continuous source-to-drain diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4 A
Pulsed drain current, each output, Imax, TC = 25°C (see Note 1 and Figure 15) . . . . . . . . . . . . . . . . . . . . . 5 A
Continuous gate-to-source zener-diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 50 mA
Pulsed gate-to-source zener-diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 500 mA
Single-pulse avalanche energy, EAS, TC = 25°C (see Figures 4, 15, and 16) . . . . . . . . . . . . . . . . . . . 10.2 mJ
Continuous total power dissipation, TC = 25°C (see Figure 15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.08 W
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 150°C
Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Pulse duration = 10 ms, duty cycle = 2%
2 POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443





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