DMOS array. TPIC5421L Datasheet

TPIC5421L array. Datasheet pdf. Equivalent

Part TPIC5421L
Description logic-level power DMOS array
Feature ą • Low rDS(on) . . . 0.4 Ω Typ • Voltage Output . . . 60 V • Input Protection Circuitry . . . 18 V .
Manufacture etcTI
Datasheet
Download TPIC5421L Datasheet



TPIC5421L
ą
Low rDS(on) . . . 0.4 Typ
Voltage Output . . . 60 V
Input Protection Circuitry . . . 18 V
Pulsed Current . . . 3 A Per Channel
Extended ESD Capability . . . 4000 V
Direct Logic-Level Interface
description
The TPIC5421L is a monolithic gate-protected
logic-level power DMOS array that consists of four
electrically isolated N-channel enhancement-
mode DMOS transistors, two of which are
configured with common source. Each transistor
features integrated high-current zener diodes
(ZCXa and ZCXb) to prevent gate damage in the
event that an overstress condition occurs. These
zener diodes also provide up to 4000 V of ESD
protection when tested using the human-body
model of a 100-pF capacitor in series with a 1.5-k
resistor.
The TPIC5421L is offered in a 20-pin wide-body
surface-mount (DW) package and a 16-pin
thermally-enhanced dual-in-line (NE) package
and is characterized for operation over the case
temperature of −40°C to 125°C.
TPIC5421L
HĆBRIDGE GATEĆPROTECTED LOGICĆLEVEL
POWER DMOS ARRAY
SLIS027A − OCTOBER 1994 − REVISED OCTOBER 1995
DW PACKAGE
(TOP VIEW)
GND
SOURCE4/GND
GATE4
NC
DRAIN4
SOURCE3
DRAIN3
GATE3
NC
NC
1
2
3
4
5
6
7
8
9
10
20 SOURCE2/GND
19 GATE2
18 NC
17 NC
16 DRAIN2
15 SOURCE1
14 DRAIN1
13 GATE1
12 NC
11 NC
NE PACKAGE
(TOP VIEW)
DRAIN2
SOURCE2/GND
GATE2
GND
GND
GATE4
SOURCE4/GND
DRAIN4
1
2
3
4
5
6
7
8
16 SOURCE1
15 DRAIN1
14 GATE1
13 GND
12 GND
11 GATE3
10 DRAIN3
9 SOURCE3
NC − No internal connection
schematic
14
DRAIN1
GATE1 13
ZC1b
ZC1a
SOURCE1 15
DRAIN2 16
Q1
Z1 D1 D2
Z3
19
GATE2
ZC2b
ZC2a
Q2
Z2
Z4
1, 2, 20
GND, SOURCE2, SOURCE4
NOTE A: For correct operation, no terminal may be taken below GND.
Pin numbers shown are for the DW package.
7
DRAIN3
Q3
8 GATE3
ZC3b
ZC3a
6 SOURCE3
5 DRAIN4
Q4
3 GATE4
ZC4b
ZC4a
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright 1995, Texas Instruments Incorporated
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443
1



TPIC5421L
TPIC5421L
HĆBRIDGE GATEĆPROTECTED LOGICĆLEVEL
POWER DMOS ARRAY
SLIS027A − OCTOBER 1994 − REVISED OCTOBER 1995
ą
absolute maximum ratings over operating case temperature range (unless otherwise noted)
Drain-to-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Source-to-GND voltage (Q1, Q3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Drain-to-GND voltage (Q1, Q3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Drain-to-GND voltage (Q2, Q4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Gate-to-source voltage range, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −9 V to 18 V
Continuous drain current, each output, TC = 25°C: NE package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 A
DW package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A
Continuous source-to-drain diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A
Pulsed drain current, each output, Imax, TC = 25°C (see Note 1 and Figure 15) . . . . . . . . . . . . . . . . . . . . . 3 A
Continuous gate-to-source zener-diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 50 mA
Pulsed gate-to-source zener-diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 500 mA
Single-pulse avalanche energy, EAS, TC = 25°C (see Figures 4 and 16) . . . . . . . . . . . . . . . . . . . . . . . 180 mJ
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 150°C
Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Pulse duration = 10 ms, duty cycle = 2%
PACKAGE
DW
NE
DISSIPATION RATING TABLE
TC 25°C
POWER RATING
1125 mW
2075 mW
DERATING FACTOR
ABOVE TC = 25°C
9.0 mW/°C
16.6 mW/°C
TC = 125°C
POWER RATING
225 mW
415 mW
2 POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443





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