IGBT Module. 2MBI1200VT-170E Datasheet

2MBI1200VT-170E Module. Datasheet pdf. Equivalent

Part 2MBI1200VT-170E
Description IGBT Module
Feature http://www.fujielectric.com/products/semiconductor/ 2MBI1200VT-170E IGBT MODULE (V series) 1700V /.
Manufacture Fuji Electric
Datasheet
Download 2MBI1200VT-170E Datasheet



2MBI1200VT-170E
http://www.fujielectric.com/products/semiconductor/
2MBI1200VT-170E
IGBT MODULE (V series)
1700V / 1200A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Items
Symbols
Conditions
Collector-Emitter voltage
VCES
Gate-Emitter voltage
VGES
IC Continuous
Collector current
ICP
-IC
-IC pulse
Collector power dissipation
PC
Junction temperature
Tj
Operating junction temperature (under switching conditions) Tjop
Storage temperature
Tstg
Isolation voltage between terminal and copper base (*1) Viso
Mounting
-
Screw torque (*2) Main Terminals
-
Sense Terminals
-
1ms
1ms
1 device
AC : 1min.
M6
M8
M4
TC=25°C
TC=100°C
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable Value :
Mounting 4.25~5.75 Nm (M6) , Main Terminals 8~10 Nm (M8) , Sense Terminals 1.7~2.5 Nm (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Internal gate resistance
Input capacitance
Turn-on
Turn-off
Forward on voltage
Reverse recovery
Lead resistance, terminal-chip
Thermal resistance characteristics
Symbols Conditions
ICES VGE = 0V, VCE = 1700V
IGES VCE = 0V, VGE = ±20V
VGE (th)
VCE = 20V, IC = 1200mA
VCE (sat)
(main terminal) VGE = 15V
Tj=25°C
Tj=125°C
Tj=150°C
VCE (sat)
(chip)
IC = 1200A
Tj=25°C
Tj=125°C
Tj=150°C
Int RG
Cies VCE = 10V, VGE = 0V, f = 1MHz
ton VCC = 900V Rgon = 0.47Ω
tr
IC = 1200A
Rgoff = 0.82Ω
toff Lm=75nH
tf VGE = ±15V, Tj=125°C
VF
(main terminal) VGE = 0V
Tj=25°C
Tj=125°C
Tj=150°C
VF
(chip)
IF = 1200A
Tj=25°C
Tj=125°C
Tj=150°C
trr IF = 1200A, Tj = 125°C
R lead
Items
Symbols Conditions
Thermal resistance(1device)
Contact thermal resistance (1module) (*3)
Rth(j-c)
Rth(c-f)
IGBT
FWD
with Thermal Compound
Note *3: This is the value which is defined mounting on the additional cooling fin with thermal compound.
IGBT Modules
Maximum ratings
1700
±20
1600
1200
2400
1200
2400
7040
175
150
-40 ~ +125
4000
5.75
10
2.5
Units
V
V
A
W
°C
VAC
Nm
Characteristics
min. typ. max.
- - 1.0
- - 1600
6.0 6.5 7.0
- 2.32 2.61
- 2.72 -
- 2.77 -
- 2.00 2.25
- 2.40 -
- 2.45 -
- 1.88 -
- 109 -
- 2.14 -
- 0.79 -
- 2.29 -
- 0.33 -
- 1.98 2.34
- 2.14 -
- 2.11 -
- 1.66 1.98
- 1.82 -
- 1.79 -
- 0.47 -
- 0.268 -
Units
mA
nA
V
V
nF
µs
V
µs
Characteristics
min. typ. max.
- - 0.0213
- - 0.0294
- 0.0077 -
Units
°C/W
1 8049a
FEBRUARY 2013



2MBI1200VT-170E
2MBI1200VT-170E
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C, chip
2500
VGE=20V
15V
12V
2000
1500
1000
10V
500
0
0.0
8V
1.0 2.0 3.0 4.0
Collector-Emitter voltage: VCE [V]
5.0
Collector current vs. Collector-Emitter voltage (typ.)
VGE= +15V, chip
2500
Tj=125°C
Tj=25°C
2000
1500
Tj=150°C
1000
500
0
0.0
1.0 2.0 3.0 4.0
Collector-Emitter Voltage: VCE [V]
5.0
Capacitance vs. Collector-Emitter voltage (typ.)
VGE= 0V, ƒ= 1MHz, Tj= 25°C
1000
100
Cies
Cres
10
Coes
1
0 10 20 30
Collector-Emitter voltage: VCE [V]
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C, chip
2500
VGE=20V
15V
2000
1500
12V
1000
10V
500
0
0.0
8V
1.0 2.0 3.0 4.0
Collector-Emitter voltage: VCE [V]
5.0
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25°C, chip
10
8
6
4
IC=2400A
2 IC=1200A
IC=600A
0
5 10 15 20
Gate - Emitter voltage: VGE [V]
25
25
20
15
10
5
0
-5
-10
-15
-20
-25
-15
Dynamic Gate charge (typ.)
Tj= 25°C
1000
800
VCE VGE 600
400
200
0
-200
-400
-600
-800
-10 -5 0
-1000
5 10 15
Gate charge: Qg [μC]
2





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