IGBT Module. 2MBI1400VXB-120P-54 Datasheet

2MBI1400VXB-120P-54 Module. Datasheet pdf. Equivalent

Part 2MBI1400VXB-120P-54
Description IGBT Module
Feature http://www.fujielectric.com/products/semiconductor/ 2MBI1400VXB-120P-54 IGBT MODULE (V series) 1200.
Manufacture Fuji Electric
Datasheet
Download 2MBI1400VXB-120P-54 Datasheet



2MBI1400VXB-120P-54
http://www.fujielectric.com/products/semiconductor/
2MBI1400VXB-120P-54
IGBT MODULE (V series)
1200V / 1400A / 2 in one package
IGBT Modules
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
Ic
Collector current
Ic pulse
-Ic
-Ic pulse
Collector power dissipation
Pc
Junction temperature
Tj
Operating junction temperature (under switching conditions) Tjop
Case temperature
TC
Storage temperature
Tstg
Isolation voltage
between terminal and copper base (*1)
between thermistor and others (*2)
Viso
Mounting
Screw torque (*3) Main Terminals
-
Sense Terminals
Conditions
Continuous
1ms
1ms
1 device
Tc=25°C
Tc=100°C
AC : 1min.
M5
M8
M4
Maximum ratings
1200
±20
1800
1400
2800
1400
2800
7650
175
150
150
-40 ~ +150
4000
6.0
10.0
2.1
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable Value : Mounting
3.0 ~   6.0 Nm (M5)
Recommendable Value : Main Terminals 8.0 ~ 10.0 Nm (M8)
Recommendable Value : Sense Terminals  1.8 ~ 2.1 Nm (M4)
Units
V
V
A
W
°C
VAC
Nm
1
7911
SEPTEMBER 2013



2MBI1400VXB-120P-54
2MBI1400VXB-120P-54
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Symbols Conditions
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
( with VCE(sat) classification : *5 )
Internal gate resistance
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
( with VF classification : *5 )
Reverse recovery time
Resistance
B value
ICES
IGES
VGE (th)
VCE (sat)
(terminal)
(*4)
VCE (sat)
(chip)
Rg(int)
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
(*4)
VF
(chip)
trr
R
B
VGE = 0V, VCE = 1200V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 1400mA
Tj=25°C
Tj=125°C
VGE = 15V
Tj=150°C
IC = 1400A
Tj=25°C
Tj=125°C
Tj=150°C
-
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 600V
IC = 1400A
VGE = ±15V
RG = 1Ω
Ls = 60nH
Tj=25°C
Tj=125°C
VGE = 0V
Tj=150°C
IF = 1400A
Tj=25°C
Tj=125°C
Tj=150°C
IF = 1400A
T=25°C
T=100°C
T=25/50°C
Note *4: Please refer to page 6 , there is definition of on-state voltage at terminal.
Thermal resistance characteristics
Items
Symbols Conditions
Thermal resistance (1device)
Contact thermal resistance (1device) (*5)
Rth(j-c)
Rth(c-f)
Inverter IGBT
Inverter FWD
with Thermal Compound
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Characteristics
min. typ. max.
- - 12.0
- - 2400
6.0 6.5 7.0
- 1.75 2.20
- 2.10 -
- 2.15 -
- 1.65 2.10
- 2.00 -
- 2.05 -
- 0.79 -
- 128 -
- 1000 -
- 400 -
- 150 -
- 1200 -
- 150 -
- 1.90 2.35
- 2.05 -
- 2.00 -
- 1.80 2.25
- 1.95 -
- 1.90 -
- 200 -
- 5000 -
465 495 520
3305 3375 3450
Units
mA
nA
V
V
nF
nsec
V
nsec
K
Characteristics
min. typ. max.
- - 0.0195
- - 0.0360
- 0.00420 -
Units
°C/W
2





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