IGBT Module. 2MBI150VH-170-50 Datasheet

2MBI150VH-170-50 Module. Datasheet pdf. Equivalent

Part 2MBI150VH-170-50
Description IGBT Module
Feature http://www.fujielectric.com/products/semiconductor/ 2MBI150VH-170-50 IGBT Modules IGBT MODULE (V .
Manufacture Fuji Electric
Total Page 6 Pages
Datasheet
Download 2MBI150VH-170-50 Datasheet



2MBI150VH-170-50
http://www.fujielectric.com/products/semiconductor/
2MBI150VH-170-50
IGBT Modules
IGBT MODULE (V series)
1700V / 150A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Package No. : M276
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
Conditions
IC Continuous
Collector current
IC pulse
-IC
-IC pulse
Collector power dissipation
PC
Junction temperature
Tj
Operating junction temperature (under switching conditions) Tjop
Case temperature
TC
Storage temperature
Tstg
Isolation voltage between terminal and copper base (*1) Viso
Screw torque
Mounting (*2)
Terminals (*3)
-
-
1ms
1ms
1 device
AC : 1min.
Note *1: All terminals should be connected together during the test.
Note *2: Recommendable Value : 3.0-6.0 N·m (M5 or M6)
Note *3: Recommendable Value : 2.5-5.0 N·m (M5)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
TC=25°C
TC=100°C
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Internal gate resistance
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Symbols
ICES
IGES
VGE (th)
VCE (sat)
(terminal)
VCE (sat)
(chip)
RG (int)
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
VF
(chip)
trr
Conditions
VGE = 0V, VCE = 1700V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 150mA
Tj=25°C
Tj=125°C
VGE = 15V
Tj=150°C
IC = 150A
Tj=25°C
Tj=125°C
Tj=150°C
-
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 900V, IC = 150A
VGE = ±15V, Rg_on=Rg_off= 4.8Ω
Tj=150°C, LS = 30nH
VGE = 0V
IF = 150A
IF = 150A
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Maximum ratings
1700
±20
150
250
300
150
300
1110
175
150
125
-40 ~ 125
4000
6.0
5.0
Units
V
V
A
W
°C
VAC
Nm
Characteristics
min. typ. max.
- - 2.0
- - 400
6.0 6.5 7.0
- 2.20 2.65
- 2.60 -
- 2.65 -
- 2.00 2.45
- 2.40 -
- 2.45 -
- 5.0 -
- 16 -
- 950 -
- 350 -
- 60 -
- 1050 -
- 140 -
- 1.95 2.40
- 2.20 -
- 2.20 -
- 1.80 1.95
- 2.05 -
- 2.05 -
- 220 -
Units
mA
nA
V
V
Ω
nF
nsec
V
nsec
Thermal resistance characteristics
Items
Symbols Conditions
Thermal resistance(1device)
Contact thermal resistance (1device) (*4)
Rth(j-c)
Rth(c-f)
IGBT
FWD
with Thermal Compound
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Characteristics
min. typ. max.
- - 0.135
- - 0.200
- 0.0250 -
Units
°C/W
1 7938a
May 2012



2MBI150VH-170-50
2MBI150VH-170-50
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
400
15V
300
VGE=20V
12V
200
10V
100
0
0
8V
1234
Collector-Emitter voltage: VCE [V]
5
Collector current vs. Collector-Emitter voltage (typ.)
VGE= 15V / chip
400
Tj=25°C
125°C
300
150°C
200
100
0
01234
Collector-Emitter Voltage: VCE [V]
5
Gate Capacitance vs. Collector-Emitter Voltage
VGE= 0V, ƒ= 1MHz, Tj= 25°C
100
Cies
10
Cres
1
Coes
0.1
0
10 20
Collector-Emitter voltage: VCE [V]
30
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
400
VGE= 20V 15V
300 12V
200 10V
100
0
0
8V
1234
Collector-Emitter voltage: VCE [V]
5
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C / chip
8
6
4
Ic=300A
2 Ic=150A
Ic=75A
0
5 10 15 20 25
Gate-Emitter Voltage: VGE [V]
Dynamic Gate Charge (typ.)
Vcc=900V, Ic=150A, Tj= 25°C
20 1200
15
10 VCE
900
600
5 300
00
-5 -300
-10
VGE
-15
-600
-900
-20
-2
-1 0
1
Gate charge: Qg [μC]
-1200
2
2





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