IGBT Module. 6MBI150U-170 Datasheet

6MBI150U-170 Module. Datasheet pdf. Equivalent

Part 6MBI150U-170
Description IGBT Module
Feature 6MBI150U-170 IGBT Module U-Series 1700V / 150A 6 in one-package Features Applications · High spe.
Manufacture Fuji Electric
Total Page 5 Pages
Datasheet
Download 6MBI150U-170 Datasheet



6MBI150U-170
6MBI150U-170
IGBT Module U-Series 1700V / 150A 6 in one-package
Features
Applications
· High speed switching
· Inverter for Motor drive
· Uninterruptible power supply
· Voltage drive
· AC and DC Servo drive amplifier · Industrial machines, such as Welding machines
· Low inductance module structure
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Symbol
Conditions
Rating
Unit
Collector-Emitter voltage
Gate-Emitter voltaga
Collector current
VCES
VGES
IC
Continuous Tc=25°C
1700
±20
225
V
V
A
Tc=80°C
150
ICp
1ms Tc=25°C
450
Tc=80°C
300
-IC 150
Collector Power Dissipation
Junction temperature
-IC pulse
PC
Tj
1 device
300
735
+150
W
°C
Storage temperature
Tstg
Isolation voltage between terminal and copper base *1 Viso
AC:1min.
-40 to +125
3400
VAC
between thermistor and others *2
Screw Torque Mounting *3
-
3.5 N·m
Terminals *4
*1 : All terminals should be connected together when isolation test will be done.
4.5
*2 : Two thermistor terminals should be connected together, each other terminals should be connected together and shorted
to base plate when isolation test will be done.
*3 :Recommendable value : 2.5 to 3.5 N·m(M5) *4 :Recommendable value : 3.5 to 4.5 N·m(M6)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbols Conditions
Characteristics
Unit
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VGE=0V, VCE=1700V
VCE=0V, VGE=±20V
VCE=20V, IC=150mA
VGE=15V, IC=150A Tj=25°C
Tj=125°C
Min.
4.5
Typ.
6.5
2.20
2.55
Max.
2.0
400
8.5
2.70
mA
nA
V
V
VCE(sat)
Tj=25°C
2.05 2.55
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
Tj=125°C
VCE=10V, VGE=0V, f=1MHz
VCC=900V
IC=150A
VGE=±15V
RG=4.7
VGE=0V
IF=150A
Tj=25°C
Tj=125°C
Tj=25°C
2.40
15
0.58
0.32
0.10
0.80
0.15
1.95
2.15
1.80
– nF
1.20 µs
0.60
1.50
0.30
2.70 V
2.55
Reverse recovery time
Lead resistance, terminal-chip*
Resistance
(chip)
trr
R lead
R
B value
B
*4:Biggest internal terminal resistance among arm.
IF=150A
T=25°C
T=100°C
T=25/50°C
Tj=125°C
465
3305
2.00
0.3
1.0
5000
495
3375
0.60
520
3450
µs
m
Κ
Thermal resistance characteristics
Items
Symbols Conditions
Characteristics
Unit
Thermal resistance
Contact Thermal resistance
Rth(j-c)
Rth(j-c)
Rth(c-f)*5
IGBT
FWD
With thermal compound
Min.
Typ.
0.025
Max.
0.17
0.28
°C/W
°C/W
°C/W
*5 : This is the value which is defined mounting on the additional cooling fin with thermal compound.



6MBI150U-170
6MBI150U-170
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
400
VGE=20V 15V
300
12V
200
100
0
0
10V
9V
1 23 4
Collector-Emitter voltage : VCE [V]
5
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
400
T j=25°C
300
T j=125°C
200
100
0
0 1 23 4
Collector-Emitter voltage : VCE [V]
5
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1M Hz, Tj= 25°C
1000.0
100.0
10.0
Cies
Cres
1.0
Coes
0.1
0
10 20
Collector-Emitter voltage : VCE [V]
30
IGBT Module
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
400
VGE=20V
15V
300
12V
200
100
0
0
10V
9V
1 234
Collector-Emitter voltage : VCE [V]
5
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C / chip
10
8
6
4
2 Ic=300A
Ic=150A
Ic=75A
0
5 10 15 20 25
Gate - Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=900V, Ic=150A, Tj= 25°C
VGE
0
0
VCE
200 400 600
Gate charge : Qg [ nC ]
800





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)