n-channel JFET. BF244C Datasheet

BF244C Datasheet PDF, Equivalent


Part Number

BF244C

Description

n-channel JFET

Manufacture

Siliconix

Total Page 1 Pages
PDF Download
Download BF244C Datasheet PDF


BF244C Datasheet
n-channel JFETs
designed for
VHF/UHF Amplifiers
•• Oscillators
Mixers
H
Silicanix
Performance Curves NH
See Section 4
BENEFITS
• Wide Band
High Yfs/Ciss Ratio
Low Feedback Capacitance
Crss = 0.85 pF Typical
• Selected IDSS and V GS Ranges
ABSOLUTE MAXIMUM RATINGS (25°C)
Drain-Gate Voltage .............................30 V
Drain-Source Voltage ........................... 30 V
Reverse Gate-Source Voltage...................... 30 V
Forward Gate Current ......................... 10 mA
Continuous Device Dissipation
at (or Below) 25°C Free Air Temperature
(Note 1) ................................ 200 mW
Storage Temperature Range ............ -55°C to +150°C
Lead Temperature
(1/16" from case for 10 seconds) ........ , ......260°C
ELECTRICAL CHARACTERISTICS (25°C)
TO·92
See Section 6
,~:
• INSULATED CASE
• INSENSITIVE TO LIGHT
sGa
l!)G 0
s0
Bottom View
Characteristic
- 1 BVGSS
2 IGSS
3 ' lOSS
-S
-4 T
5 A lOSS
-T
~I
Gate·Saurce Breakdown Voltage
Gate Reverse Current
Saturation Dram Current
Selected Into Following
Groups (Note 2)
BF244A
BF244B
BF244C
-7 C
- B VGS
Corresponding to
lOSS groups
BF244A
BF244B
- 9 BF244C
10 VGS(off) Gate·Source Cutoff Voltage
-11 gls
0
12 Y Crss
_N
- '13 A
"14M
-1
g,s
15 C CISS
""16 Coss
Small·Signal Comman·Source Forward
Transconductance
Common-Source Reverse
Transfer Capacitance
Input Resistance
Common-Source Input Capacitance
Common-Source Output Capacitance
Min Typ Max Unit
Test Conditions
-30 V IG = -1 j.lA, VOS = 0
-5 nA VGS=-20V,VOS=0
2 25 rnA VOS = 15 V, VGS = 0
2.0 6.5 rnA
6.0 15 rnA VOS = 15 V, VGS = 0
12 25 rnA
-{).4
-2.2
V
-1.6
-3.8 V VOS = 15 V,IO = 200j.lA
-3.2
-7.5
V
-{l.5 -8 V VOS = 15 V,IO = 1Oj.lA
3 5.5 6.5 mrnho VOS=15V,VGS=O,I=1 kHz
0.85 .
25
10
4
1.6
pF VOS=20V, VGS=-1 V
Ikn 1= 100 MHz
Ikn VOS = 20 V, V'GS =-1 V 1=200MHz
pF VOS=20V,VGS=-1 V
pF VOS = 20V, VGS =-1 V
NOTE:
1. Oerate linearly to 125°C Iree·aor temperature at the rate 01 2.5 mwtC.
2. Pulse test PW .. 300 j.lS, duty cycle .. 3%.
NH
-
Silicanix
3-37


Features Datasheet pdf n-channel JFETs designed for • • • VHF/UHF Amplifiers •• Oscillators • Mixers H Silicanix Performance Cur ves NH See Section 4 BENEFITS • Wide Band High Yfs/Ciss Ratio • Low Feedba ck Capacitance Crss = 0.85 pF Typical Selected IDSS and V GS Ranges ABSOL UTE MAXIMUM RATINGS (25°C) Drain-Gate Voltage .............................30 V Drain-Source Voltage ............... ............ 30 V Reverse Gate-Source V oltage...................... 30 V Forwa rd Gate Current ....................... .. 10 mA Continuous Device Dissipation at (or Below) 25°C Free Air Temperatur e (Note 1) ............................ .... 200 mW Storage Temperature Range . ........... -55°C to +150°C Lead Temp erature (1/16" from case for 10 seconds ) ........ , ......260°C ELECTRICAL CH ARACTERISTICS (25°C) TO·92 See Secti on 6 ,~: • INSULATED CASE • INSEN SITIVE TO LIGHT sGa l!)G 0 s0 Bottom Vi ew Characteristic - 1 BVGSS 2 IGSS 3 ' lOSS -S -4 T 5 A lOSS -T ~I Gate·Saurce Breakdown Voltage Gate Reverse Current Saturati.
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