n-channel JFET. BF245B Datasheet

BF245B Datasheet PDF, Equivalent


Part Number

BF245B

Description

n-channel JFET

Manufacture

Siliconix

Total Page 1 Pages
PDF Download
Download BF245B Datasheet PDF


BF245B Datasheet
n-channel JFETs
designed for • •
VHF/UHF Amplifiers
Oscillators
Mixers
ABSOLUTE MAXIMUM RATINGS (25°C)
Drain·Gate Voltage ............................. 30 V
Drain-Source Voltage ........................... 30 V
Reverse Gate-Source Voltage...................... 30 V
Forward Gate Current ......................... 10 mA
Continuous Device Dissipation
at (or Below) 25°C Free Air Temperature
(Note 1) ................................ 200 mW
Storage Temperature Range ............ -55°C to +150°C
Lead Temperature
(1/16" from case for 10 seconds) ...............260°C
ELECTRICAL CHARACTERISTICS (25°C)
H
Billcanix
Performance Curves NH
See Sedion 4
BENEFITS
• Wide Band
High Yfs/Ciss Ratio
Low Feedback Capacitance
Crss = 0.85 pF Typical
• Selected IDSS and V GS Ranges
TO·92
See Section 6
.~:
• INSULATED CASE
• INSENSITIVE TO LIGHT
sD
DOG
GC
SC
Bottom View
Characteristic
-1
2
--;:-
I-=- S
!~ T
5A
1- T
I~ I
1---2.. C
8
Ig
1-
10
BVGSS
IGSS
iOSS
lOSS
Gate-Source Breakdown Voltage
Gate Reverse Current
Saturation Drain Current
Selected Into Following
Groups INote 21
BF245A
BF245B
BF245C
VGS
Corresponding to
lOSS groups
BF245A
BF245B
BF245C
VGSloff) Gate·Source Cutoff Voltage
11 gfs
1-0
12 V Crss
I- N
11413
A
M
-1
g,s
I-I
15 C CISS
""16 Coss
Smail-Signal Common-Source Forward
Transconductance
Common-Source Reverse
Transfer Capacitance
Input Resistance
Common·Source Input Capacitance
Common-Source Output Capacitance
Min Typ
-30
2
20
6.0
12
-{).4
16
-3.2
-{)5
Max
-5
25
65
15
25
-2.2
-3.8
-75
-8
Unit
V
nA
rnA
rnA
rnA
rnA
V
V
V
V
Test Conditions
IG = -1 /lA. VOS = 0
VGS = -20V. VOS =0
VOS = 15 V. VGS = 0
VOS= 15V. VGS =0
VOS=15V.IO=200 /lA
VOS=15V.IO=IO/lA
3 55
65 mmho VOS = 15 V. VGS = O. f = 1 kHz
085
25
10
4
16
pF VOS= 20V. VGS = 1 V
Ik!l f=100MHz
IkH VOS=20V.VGS=-IV f = 200 MHz
pF VOS = 20 V. VGS = --1 V
pF VOS = 20 V. VGS = -1 V
NOTE:
1. Derate linearly to 125°C free-air temperature at the rate of 2 5 mWrC
2. Pulse test PW " 300 /lS. duty cycle'" 3%
I'JH
3-38 Siliconix


Features Datasheet pdf n-channel JFETs designed for • • • • VHF/UHF Amplifiers • Oscillators • Mixers ABSOLUTE MAXIMUM RATINGS (2 5°C) Drain·Gate Voltage ............. ................ 30 V Drain-Source Volt age ........................... 30 V Re verse Gate-Source Voltage.............. ........ 30 V Forward Gate Current .... ..................... 10 mA Continuous Device Dissipation at (or Below) 25°C Free Air Temperature (Note 1) ......... ....................... 200 mW Storage Temperature Range ............ -55°C t o +150°C Lead Temperature (1/16" from case for 10 seconds) ...............260 °C ELECTRICAL CHARACTERISTICS (25°C) H Billcanix Performance Curves NH See Sedion 4 BENEFITS • Wide Band High Yf s/Ciss Ratio • Low Feedback Capacitan ce Crss = 0.85 pF Typical • Selected IDSS and V GS Ranges TO·92 See Sectio n 6 .~: • INSULATED CASE • INSENS ITIVE TO LIGHT sD DOG GC SC Bottom View Characteristic -1 2 --;:- I-=- S !~ T 5A 1- T I~ I 1---2.. C 8 Ig 1- 10 BVGSS IGSS iOSS lOSS Gate-Source Breakdown Voltage Gat.
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