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IMW120R045M1
1200V SiC Trench MOSFET
Description
IMW120R045M1 IMW120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Very low switching losses Threshold-free on state characteristic Wide gate-source voltage range Benchmark gate threshold voltage, VGS(th) = 4.5V 0V turn-off gate voltage Fully controllable dV/dt Commutation robust body diode, ready for synchronous recti...
Infineon
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IMW120R045M1
1200V SiC Trench MOSFET
- Infineon
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