TRANSISTOR. KTC3205 Datasheet

KTC3205 Datasheet PDF


Part

KTC3205

Description

NPN BIPOLAR TRANSISTOR

Manufacture

HOTTECH

Page 4 Pages
Datasheet
Download KTC3205 Datasheet


KTC3205 Datasheet
BIPOLAR TRANSISTOR (NPN)
FEATURES
Complementary to KTA1273
High Current Application
Surface Mount device
MECHANICAL DATA
Case: SOT-89
Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Weight: 0.055 grams (approximate)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
KTC3205
SOT-89
Value
30
30
5
2
500
150
-55 ~+150
Unit
V
V
V
A
mW
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Typ
Ma
x
Unit
Conditions
Collector-base breakdown voltage
V(BR)CBO
30
V IC=1mAIE=0
Collector-emitter
voltage
breakdown V(BR)CEO
30
V IC=10mAIB=0
Emitter-base breakdown voltage
V(BR)EBO
5
V IE=1mAIC=0
Collector cut-off current ICBO 0.1 uA VCB=30V, IE=0
Emitter cut-off current
IEBO 0.1 uA VEB=5V, IC=0
DC current gain
Collector-emitter saturation voltage
hFE
VCE(sat)
100
320 VCE=2V, IC=500mA
2 V IC=1.5AIB=30mA
Base-emitter voltage VBE 1 V VCE=2V, IC=500mA
Transition frequency
fT 120 MHz VCE=6V, IC=500mA
Collector output capacitance
Cob
13 pF VCB=10V, IE=0, f=1MHz
CLASSIFICATION OF hFE
Rank
Range
Marking
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
O
100-200
3205
E-mail:hkt@heketai.com
Y
160-320
1/4

KTC3205 Datasheet
BIPOLAR TRANSISTOR (NPN)
Typical Characteristics
2.0
COMMON
EMITTER
T =25
a
1.5
Static Characteristic
5.0mA
4.5mA
4.0mA
3.5mA
1.0 3.0mA
2.5mA
0.5
0.0 0
2.0mA
1.5mA
1.0mA
I =0.5mA
B
1234567
COLLECTOR-EMITTER VOLTAGE V (V)
CE
8
V
BEsat
——
I
C
1.2
1.1
1.0
0.9
0.8 T =25
a
0.7
0.6
T =100
0.5 a
0.4
0.3
0.1
1 10 100
COLLECTOR CURRENT I (mA)
C
β=50
1000 2000
2000
1000
V —— I
BE C
100
10
1
0.1
0.2
0.75
T =100 oC
a
T =25
a
0.4 0.6
BASE-EMITTER VOLTAGE
0.8
V (V)
BE
P —— T
ca
V =2V
CE
1.0
KTC3205
500
450
400
350
300
250
200
150
100
50
0
1
500
100
h —— I
FE C
T =100 oC
a
T =25 oC
a
V =2V
CE
10 100
COLLECTOR CURRENT I (mA)
C
V —— I
CEsat
C
1000 2000
T =100
a
T =25
a
10
1
200
100
10 100
COLLECTOR CURRENT I (mA)
C
C /C
ob ib
——
V/
CB
V
EB
β=50
1000 2000
Cib
f=1MHz
I =0 / I =0
EC
T =25 oC
a
10
0.1
Cob
1
REVERSE VOLTAGE V (V)
10 20
0.50
0.25
0.00
0
25 50 75 100 125
AMBIENT TEMPERATURE Ta ()
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
150
E-mail:hkt@heketai.com
2/4


Features Datasheet pdf BIPOLAR TRANSISTOR (NPN) FEATURES  Co mplementary to KTA1273  High Current Application  Surface Mount device MECHANICAL DATA  Case: SOT-89  Ca se Material: Molded Plastic. UL flammab ility  Classification Rating: 94V-0  Moisture Sensitivity: Level 1 per J -STD-020  Weight: 0.055 grams (appro ximate) MAXIMUM RATINGS (TA = 25°C unl ess otherwise noted) Parameter Collecto r-Base Voltage Collector-Emitter Voltag e Emitter-Base Voltage Collector Curren t Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ TSTG KTC3205 SOT-89 Value 30 30 5 2 500 150 -55 ~+ 150 Unit V V V A mW °C °C ELECTRICA L CHARACTERISTICS (TA = 25°C unless ot herwise specified) Parameter Symbol M in Typ Ma x Unit Conditions Collect or-base breakdown voltage V(BR)CBO 30 V IC=1mAIE=0 Collector-emitter volta ge breakdown V(BR)CEO 30 V IC=10mAIB =0 Emitter-base breakdown voltage V(B R)EBO 5 V IE=1mAIC=0 Collector cut-off current ICBO 0.1 uA VCB=30V, IE=0 Emitte.
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