Transistors. ST13005 Datasheet

ST13005 Datasheet PDF


Part

ST13005

Description

NPN Silicon Power Transistors

Manufacture

SEMTECH

Page 3 Pages
Datasheet
Download ST13005 Datasheet


ST13005 Datasheet
ST 13005
NPN Silicon Power Transistors
for high-voltage, high-speed power switching
applications.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation (Ta = 25 OC)
Power Dissipation (Tc = 25 OC)
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VCE = 5 V, IC = 1 A
at VCE = 5 V, IC = 2 A
Collector Base Cutoff Current
at VCB = 700 V
Emitter Base Cutoff Current
at VEB = 9 V
Collector Emitter Breakdown Voltage
at IC = 10 mA
Collector Emitter Saturation Voltage
at IC = 1 A, IB = 0.2 A
at IC = 2 A, IB = 0.5 A
at IC = 4 A, IB = 1 A
Base Emitter Saturation Voltage
at IC = 1 A, IB = 0.2 A
at IC = 2 A, IB = 0.5 A
Gain Bandwidth Product
at VCE = 10 V, IC = 500 mA, f = 1 MHz
Collector Base Capacitance
at VCB = 10 V, f = 0.1 MHz
TO-220 Plastic Package
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Ptot
Tj
Tstg
Value
700
400
9
4
2
75
150
- 55 to + 150
Unit
V
V
V
A
W
W
OC
OC
Symbol Min.
hFE
hFE
ICBO
10
8
-
IEBO
-
V(BR)CEO 400
VCE(sat)
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
fT
Cob
-
-
-
-
-
4
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
65
Max.
60
40
1
1
-
Unit
-
-
mA
mA
V
0.5 V
0.6 V
1V
1.2 V
1.6 V
- MHz
- pF
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
®
Dated : 24/05/2010 Rev:01

ST13005 Datasheet
ST 13005
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
®
Dated : 24/05/2010 Rev:01


Features Datasheet pdf ST 13005 NPN Silicon Power Transistors f or high-voltage, high-speed power switc hing applications. Absolute Maximum Rat ings (Ta = 25 OC) Parameter Collector B ase Voltage Collector Emitter Voltage E mitter Base Voltage Collector Current P ower Dissipation (Ta = 25 OC) Power Dis sipation (Tc = 25 OC) Junction Temperat ure Storage Temperature Range Character istics at Ta = 25 OC Parameter DC Curre nt Gain at VCE = 5 V, IC = 1 A at VCE = 5 V, IC = 2 A Collector Base Cutoff Cu rrent at VCB = 700 V Emitter Base Cutof f Current at VEB = 9 V Collector Emitte r Breakdown Voltage at IC = 10 mA Colle ctor Emitter Saturation Voltage at IC = 1 A, IB = 0.2 A at IC = 2 A, IB = 0.5 A at IC = 4 A, IB = 1 A Base Emitter Sa turation Voltage at IC = 1 A, IB = 0.2 A at IC = 2 A, IB = 0.5 A Gain Bandwidt h Product at VCE = 10 V, IC = 500 mA, f = 1 MHz Collector Base Capacitance at VCB = 10 V, f = 0.1 MHz TO-220 Plastic Package Symbol VCBO VCEO VEBO IC Ptot Ptot Tj Tstg Value 700 400 9 4 2 75 150 - 55 to + 150 Unit V.
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