(PDF) UC3610 Datasheet PDF | etcTI





UC3610 Datasheet PDF

Part Number UC3610
Description DUAL SCHOTTKY DIODE BRIDGE
Manufacture etcTI
Total Page 13 Pages
PDF Download Download UC3610 Datasheet PDF

Features: Datasheet pdf UC1610 UC3610 SLUS339B − JUNE 1993 REVISED DECEMBER 2004 DUAL SCHOTTKY D IODE BRIDGE FEATURES D Monolithic Eigh t-Diode Array D Exceptional Efficiency D Low Forward Voltage D Fast Recovery T ime D High Peak Current D Small Size D ESCRIPTION This eight-diode array is de signed for high-current, low duty-cycle applications typical of flyback voltag e clamping for inductive loads. The dua l bridge connection makes this device p articularly applicable to bipolar drive n stepper motors. The use of Schottky d iode technology features high efficienc y through lowered forward voltage drop and decreased reverse recovery time. Th is single monolithic chip is fabricated in both hermetic CERDIP and copper-lea ded plastic packages. The UC1610 in cer amic is designed for −55°C to 125°C environments but with reduced peak cur rent capability. The UC2610 in plastic and ceramic is designed for −25°C to 125°C environments also with reduced peak current capability; while the UC3610 in plastic has higher current rat.

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UC3610 datasheet
UC1610
UC3610
SLUS339B − JUNE 1993 − REVISED DECEMBER 2004
DUAL SCHOTTKY DIODE BRIDGE
FEATURES
D Monolithic Eight-Diode Array
D Exceptional Efficiency
D Low Forward Voltage
D Fast Recovery Time
D High Peak Current
D Small Size
DESCRIPTION
This eight-diode array is designed for
high-current, low duty-cycle applications typical of
flyback voltage clamping for inductive loads. The
dual bridge connection makes this device
particularly applicable to bipolar driven stepper
motors.
The use of Schottky diode technology features
high efficiency through lowered forward voltage
drop and decreased reverse recovery time.
This single monolithic chip is fabricated in both
hermetic CERDIP and copper-leaded plastic
packages. The UC1610 in ceramic is designed for
−55°C to 125°C environments but with reduced
peak current capability. The UC2610 in plastic and
ceramic is designed for −25°C to 125°C
environments also with reduced peak current
capability; while the UC3610 in plastic has higher
current rating over a 0°C to 70°C temperature
range.
AVAILABLE OPTIONS
TA = TJ
−55°C to 125°C
−25°C to 125°C
0°C to 70°C
SOIC Wide (DW)
UC1610DW
UC2610DW
UC3610DW
Packaged Devices
DIL (J)
UC1610J
UC2610J
UC3610J
DIL (N)
UC1610N
UC2610N
UC3610N
THERMAL INFORMATION
PACKAGE
θja
θjc
SOIC (DW) 16 pin
50 − 100(1)
27
DIP (J) 8 pin
125 − 160
20(2)
DIP (N) 8 pin
103(1)
50
NOTES:
1. Specified θja (junction-to-ambient) is for devices mounted to 5-in2 FR4 PC board with one ounce copper where noted. When
resistance range is given, lower values are for 5-in2 aluminum PC board. Test PWB was 0.062 in thick and typically used 0.635-mm
trace widths for power packages and 1.3-mm trace widths for non-power packages with a 100-mil x 100-mil probe land area at the
end of each trace.
2. θjc data values stated were derived from MIL−STD−1835B. MIL−STD−1835B states that the baseline values shown are worst case
(mean + 2s) for a 60-mil x 60-mil microcircuit device silicon die and applicable for devices with die sizes up to 14400 square mils.
For device die sizes greater than 14400 square mils use the following values; dual-in-line, 11°C/W; flat pack, 10°C/W; pin grid array,
10°C/W.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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Copyright © 2001, Texas Instruments Incorporated
1

UC3610 datasheet
UC1610
UC3610
SLUS339B − JUNE 1993 − REVISED DECEMBER 2004
N OR J PACKAGE
TOP VIEW
DW PACKAGE
TOP VIEW
absolute maximum ratings over operating free-air temperature (unless otherwise noted)}
Peak inverse voltage (per diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V
Peak forward current
UC1611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A
UC2610 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A
UC3611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 A
Power dissipation at TA = 70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
Lead temperature (soldering, 10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Consult packaging section of databook for thermal limitations and considerations of package.
electrical characteristics, all specifications apply to each individual diode, TJ = 25°C, TA = TJ,
(except as noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Forward voltage drop
Leakage current
Reverse recovery
IF = 100 mA
IF = 1 A
VR = 40 V
VR = 40 V,
TJ = 100°C
0.5 A forward to 0.5 A reverse
0.35 0.5
0.8 1.0
0.01
0.1
15
0.7
1.3
0.1
1.0
Forward recovery
1 A forward to 1.1 V recovery
30
Junction capacitance
VR = 5 V
70
NOTE: At forward currents of greater than 1.0 A, a parasitic current of approximately 10 mA may be collected by adjacent diodes.
UNITS
V
V
mA
mA
ns
ns
pF
PRODUCT PREVIEW information concerns products in the formative or
design phase of development. Characteristic data and other
specifications are design goals. Texas Instruments reserves the right to
change or discontinue these products without notice.
2
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