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IXBH20N360HV
Monolithic Bipolar MOS Transistor
Description
Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS
Transistor
IXBT20N360HV IXBH20N360HV VCES = IC110 = VCE(sat) 3600V 20A 3.4V Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Cont...
IXYS
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IXBH20N360HV
Monolithic Bipolar MOS Transistor
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