MOSFET. SQJ407EP Datasheet

SQJ407EP Datasheet PDF


Part

SQJ407EP

Description

Automotive P-Channel 30V MOSFET

Manufacture

Vishay

Page 7 Pages
Datasheet
Download SQJ407EP Datasheet


SQJ407EP Datasheet
www.vishay.com
SQJ407EP
Vishay Siliconix
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
PowerPAK® SO-8L Single
6.15 mm
1
Top View
5.13 mm
D
1
2S
3S
4S
G
Bottom View
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = -10 V
RDS(on) () at VGS = -4.5 V
ID (A)
Configuration
Package
-30
0.0044
0.0071
-60
Single
PowerPAK SO-8L
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current
Continuous source current (diode conduction) a
Pulsed drain current b
TC = 25 °C a
TC = 125 °C
VDS
VGS
ID
IS
IDM
Single pulse avalanche current
Single pulse avalanche energy
L = 0.1 mH
IAS
EAS
Maximum power dissipation b
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
TC = 25 °C
TC = 125 °C
PD
TJ, Tstg
LIMIT
-30
± 20
-60
-56
-60
-155
-41
84
68
22
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mountc
SYMBOL
RthJA
RthJC
LIMIT
68
2.2
UNIT
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. See solder profile (www.vishay.com/doc?73257). For PowerPAK SO-8L, the end of the lead terminal is exposed copper (not plated) as a
result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S16-2657-Rev. A, 02-Jan-17
1
Document Number: 62806
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SQJ407EP Datasheet
www.vishay.com
SQJ407EP
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-source breakdown voltage
VDS
VGS = 0, ID = -250 μA
Gate-source threshold voltage
Gate-source leakage
VGS(th)
IGSS
VDS = VGS, ID = -250 μA
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = -30 V
Zero gate voltage drain current
On-state drain current a
IDSS
ID(on)
VGS = 0 V
VGS = 0 V
VGS = -10 V
VDS = -30 V, TJ = 125 °C
VDS = -30 V, TJ = 175 °C
VDS -5 V
Drain-source on-state resistance a
RDS(on)
VGS = -10 V
VGS = -10 V
VGS = -10 V
ID = -10 A
ID = -10 A, TJ = 125 °C
ID = -10 A, TJ = 175 °C
Forward transconductance b
Dynamic b
VGS = -4.5 V
ID = -6 A
gfs VDS = -15 V, ID = -10 A
Input capacitance
Ciss
Output capacitance
Coss
VGS = 0 V
VDS = -25 V, f = 1 MHz
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Rg
Turn-on delay time c
td(on)
Rise time c
tr
Turn-off delay time c
td(off)
Fall time c
tf
Source-Drain Diode Ratings and Characteristics b
VGS = -10 V
VDS = -15 V, ID = -5 A
f = 1 MHz
VDD = -15 V, RL = 3
ID -5 A, VGEN = -10 V, Rg = 1
Pulsed current a
ISM
Forward voltage
VSD IF = -10 A, VGS = 0 V
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Reverse recovery fall time
Qrr
ta
IF = 10 A, di/dt = 100 A/μs
Reverse recovery rise time
tb
Body diode peak reverse recovery current
IRM(REC)
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
MIN. TYP. MAX. UNIT
-30 -
-
-1.5 -2.0 -2.5
V
- - ± 100 nA
- - -1
- - -50 μA
- - -200
-30 -
-A
- 0.0036 0.0044
- - 0.0060
- - 0.0068
- 0.0059 0.0071
- 60 - S
- 8200 10 700
- 950 1300 pF
- 785 1050
- 169 260
- 24 - nC
- 32 -
0.5 1.05 1.6
- 23 35
- 19 30
ns
- 72 120
- 14 25
-
-
-155
A
- -0.75 -1.2 V
- 39 90 ns
- 45 100 nC
- 22 -
ns
- 19 -
- -2.3 -
A
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-2657-Rev. A, 02-Jan-17
2
Document Number: 62806
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Features Datasheet pdf www.vishay.com SQJ407EP Vishay Siliconi x Automotive P-Channel 30 V (D-S) 175 °C MOSFET PowerPAK® SO-8L Single 6. 15 mm 1 Top View 5.13 mm D 1 2S 3S 4 S G Bottom View FEATURES • TrenchFET ® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested • Materia l categorization: for definitions of co mpliance please see www.vishay.com/doc? 99912 S PRODUCT SUMMARY VDS (V) RDS(on ) () at VGS = -10 V RDS(on) () at VGS = -4.5 V ID (A) Configuration Pack age -30 0.0044 0.0071 -60 Single Power PAK SO-8L G D P-Channel MOSFET ABSOLU TE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL D rain-source voltage Gate-source voltage Continuous drain current Continuous so urce current (diode conduction) a Pulse d drain current b TC = 25 °C a TC = 1 25 °C VDS VGS ID IS IDM Single pulse avalanche current Single pulse avalanc he energy L = 0.1 mH IAS EAS Maximum power dissipation b Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e .
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