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HB857

Part Number	HB857
Manufacturer	Huashan
Description	PNP SILICON TRANSISTOR
Published	Oct 16, 2019
Detailed Description	Shantou Huashan Electronic Devices Co.,Ltd. PNP SILICON TRANSISTOR HB857 APPLICATIONS LOW FREQUENCY POWER AMPLIFIER ...
Datasheet	HB857 PDF File

Overview

Shantou Huashan Electronic Devices Co.
,Ltd.
PNP SILICON TRANSISTOR HB857 APPLICATIONS LOW FREQUENCY POWER AMPLIFIER ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature Tj Junction Temperature PC Collector Dissipation Tc=25 VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current DC 55~150 150 40W -70V -50V -5V -4A TO-220 1 Base B 2 Collector C 3 Emitter, E ELECTRICAL CHARACTERISTICS Ta=25 Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO BVCEO BVEBO ICBO HFE 1 HFE 2 VCE(sat) VBE(on) ft Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC C...

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