SILICON TRANSISTOR. H1300 Datasheet

H1300 Datasheet PDF, Equivalent


Part Number

H1300

Description

PNP SILICON TRANSISTOR

Manufacture

Huashan

Total Page 2 Pages
PDF Download
Download H1300 Datasheet PDF


H1300 Datasheet
Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H1300
STROBE FLASH APPLICATIONS
MEDIUM POWER AMPLIFIER APPLICATIONS
ABSOLUTE MAXIMUM RATINGS Ta=25
TO-92
Tstg Storage Temperature
Tj Junction Temperature
PC Collector Dissipation
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC Collector Current
ICP Collector Current Pulse
-55~150
150
750mW
-20V
-10V
-6V
-2A
-5A
1 Emitter E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
-20
V IC=-100 A, IE=0
BVCEO Collector-Emitter Breakdown Voltage
-10
V IC=-10mA, IB=0
BVEBO Emitter-Base Breakdown Voltage
-6
V IE=-1mA IC=0
HFE(1) DC Current Gain
140 600 VCE=-1V, IC=-500mA
HFE(2)
70 VCE=-1V, IC=-2A
VCE(sat) Collector- Emitter Saturation Voltage
-0.5 V IC=-2A, IB=-50mA
VBE Base-Emitter Voltage
-1.5 V VCE=-1V, IC=-2A
ICBO Collector Cut-off Current
-100 nA VCB=-20V, IE=0
ICEO Collector Cut-off Current
-100 nA VCE=-10V, IB=0
IEBO Emitter Cut-off Current
-100 nA VEB=-6V, IC=0
fT Current Gain-Bandwidth Product
140 MHz VCE=-1V, IC=-0.5A
Cob Output Capacitance
50 pF VCB=-10V, IE=0 f=1MHz
hFE Classification
Y
140 280
GR
200 400
BL
300 600

H1300 Datasheet
Shantou Huashan Electronic Devices Co.,Ltd.
H1300


Features Datasheet pdf Shantou Huashan Electronic Devices Co.,L td. PNP SILICON TRANSISTOR H1300 STRO BE FLASH APPLICATIONS MEDIUM POWER AMPL IFIER APPLICATIONS ABSOLUTE MAXIMUM RAT INGS Ta=25 TO-92 Tstg Storage Tempera ture Tj Junction Temperature PC Collect or Dissipation VCBO Collector-Base Volt age VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Curr ent ICP Collector Current Pulse -55~15 0 150 750mW -20V -10V -6V -2A -5A 1 Em itter E 2 Collector C 3 Base B ELECTRI CAL CHARACTERISTICS Ta=25 Symbol Char acteristics Min Typ Max Unit Test Con ditions BVCBO Collector-Base Breakdown Voltage -20 V IC=-100 A, IE=0 BVCEO Collector-Emitter Breakdown Voltage - 10 V IC=-10mA, IB=0 BVEBO Emitter-Bas e Breakdown Voltage -6 V IE=-1mA IC=0 HFE(1) DC Current Gain 140 600 VCE=- 1V, IC=-500mA HFE(2) 70 VCE=-1V, IC=- 2A VCE(sat) Collector- Emitter Saturat ion Voltage -0.5 V IC=-2A, IB=-50mA V BE Base-Emitter Voltage -1.5 V VCE=-1V , IC=-2A ICBO Collector Cut-off Current -100 nA VCB=-20V, IE=.
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