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HBU406H

Part Number	HBU406H
Manufacturer	Huashan
Description	NPN SILICON TRANSISTOR
Published	Oct 16, 2019
Detailed Description	Shantou Huashan Electronic Devices Co.,Ltd. NPN SILICON TRANSISTOR HBU406H █ APPLICATIONS High Voltage Swltching . █ A...
Datasheet	HBU406H PDF File

Overview

Shantou Huashan Electronic Devices Co.
,Ltd.
NPN SILICON TRANSISTOR HBU406H █ APPLICATIONS High Voltage Swltching .
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature…………………………………150℃ PC——Collector Dissipation（Tc=25℃）……………………………60W VCBO——Collector-Base Voltage………………………………400V VCEO——Collector-Emitter Voltage……………………………200V VEBO——Emitter-Base Voltage………………………………………6V IC——Collector Current（DC）………………………………………7A ICP——Collector Curren（t Pulse）……………………………………10A Ib——Base Current………………………………………………4A TO-220 1―Base，B 2―Collector，C 3―Emitter，E █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions ICES（1）...

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