SP1255P Array Datasheet

SP1255P Datasheet PDF, Equivalent


Part Number

SP1255P

Description

12kV Diode Array

Manufacture

Littelfuse

Total Page 5 Pages
PDF Download
Download SP1255P Datasheet PDF


SP1255P
TVS Diode Array (SPA®Diodes)
Low Capacitance ESD and Surge Protection - SP1255P Series
SP1255P Series 0.5pF, 12kV Diode Array for μUSB
RoHS Pb GREEN
Pinout
Bottom View
Functional Block Diagram
PIN 2 (D+)
PIN 3 (D-)
PIN 4 (ID)
PIN 1
(V BUS)
PIN 5,6 (GND)
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
Description
The SP1255P integrates three channels of ultra-low
capacitance steering diodes and a low voltage TVS diode to
provide maximum protection of the USB data and ID pins
against ESD per the IEC 61000-4-2 standard. An additional
12V TVS diode is included to provide lightning surge
tphreotIeEcCtio6n10fo0r0t-4h-e5UsStaBndVaBUrdS .pTinheupSPto1215050PAp(trPo=v8id/2e0sμssu)ppeerrior
protection for current intensive applications such as fast
charging peripharals.
The SP1255P comes in a space saving 2.0x1.8mm μDFN
package with a typical height of 0.55mm making it an
ideal solution for smart phones, tablets, and other portable
electronics.
Features
• RoHS compliant and lead-free
• AEC-101 qualified
For USB Voltage Bus Pin (VBUS)
• ESD, IEC 61000-4-2, ±30kV contact, ±30kV air
• EFT, IEC 61000-4-4, 80A (tP=5/50ns)
• Lightning, IEC 61000-4-5, 100A (tP=8/20μs)
• Protection for VBUS operating up to 12V
• Benchmark setting protection
• High current handling capability for fast charging
applications
For USB Data Pin (D+, D-, ID)
• ESD, IEC 61000-4-2, ±12kV contact, ±15kV air
• EFT, IEC 61000-4-4, 40A (tP=5/50ns)
• Lightning, IEC 61000-4-5 2nd edition, 4A (tP=8/20μs)
• 0.5pF capacitance
• Low clamping voltage and dynamic resistance (0.3Ω)
Applications
• USB 2.0
• USB OTG
• μUSB
• Protection for the VBUS circuit on USB2.0 Fast Charging
Additional Information
Datasheet
Resources
Samples
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/06/19

SP1255P
TVS Diode Array (SPA®Diodes)
Low Capacitance ESD and Surge Protection - SP1255P Series
Absolute Maximum Ratings
Symbol
Parameter
Value
IPP (Pin 1)
Peak Current (tp=8/20μs)
100
IPP (Pin 2-4)
Peak Current (tp=8/20μs)
4
TOP
Operating Temperature
-40 to 125
TSTOR
Storage Temperature
-55 to 150
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied.
Units
A
A
°C
°C
Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
Test Conditions
USB VBUS (Pin 1)
Reverse Standoff Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Forward Voltage
Clamp Voltage1
ESD Withstand Voltage1
VRWM
VBR
ILEAK
VF
VC
VESD
Pin 1 to GND
IT=1mA, Pin 1 to GND
VR=12V, Pin 1 to GND
IF=10mA, GND to Pin 1
IPP=30A, tp=8/20µs, Fwd
IPP=100A, tp=8/20µs, Fwd
IEC 61000-4-2 (Contact)
IEC 61000-4-2 (Air)
Diode Capacitance1
USB D+, D-, ID (Pin 2, 3, 4)
CD
Reverse Bias=0V, f=1MHz
Reverse Standoff Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamp Voltage1
Dynamic Resistance
ESD Withstand Voltage1
VRWM
VBR
ILEAK
VC
RDYN
VESD
Pin 2, 3 and 4 to GND
IT=2µA, Pin 2, 3 and 4 to GND
VR=2V, Pin 2, 3 and 4 to GND
VR=4V, Pin 2, 3 and 4 to GND
IPP=1A, tp=8/20µs, Fwd
IPP=2A, tp=8/20µs, Fwd
TLP, tP=100ns, Pin 2, 3 and 4 to GND2
IEC 61000-4-2 (Contact)
IEC 61000-4-2 (Air)
Diode Capacitance1
CI/O-GND
Reverse Bias=0V, f=1MHz
Note: 1 Parameter is guaranteed by design and/or device characterization.
2 Transmission Line Pulse (TLP) Test Setting: tP=100ns, tr=0.2ns ITLP and VTLP averaging window: star t1=70ns to t2=90ns
Min
13.0
0.6
±30
±30
4.5
±12
±15
Typ
13.5
0.7
16.5
19.5
1300
6.0
6.6
7.0
0.3
0.5
Max
12
16.5
0.1
1.0
18
25
2500
4
7.5
0.02
0.1
8.0
8.5
0.6
Units
V
V
µA
V
V
V
kV
kV
pF
V
V
µA
V
V
Ω
kV
kV
pF
Capacitance vs. Reverse Bias (Pin1 to GND)
Capacitance vs. Reverse Bias (Pin2, 3, 4 to GND)
1100
1000
900
800
700
600
500
400
300
200
100
0
0 1 2 3 4 5 6 7 8 9 10 11 12
Bias Voltage (V)
1
0.8
0.6
0.4
0.2
0
0
0.5
1 1.5
2 2.5
Bias Voltage (V)
3 3.5
4
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/06/19


Features TVS Diode Array (SPA®Diodes) Low Capaci tance ESD and Surge Protection - SP1255 P Series SP1255P Series 0.5pF, 12kV Di ode Array for μUSB RoHS Pb GREEN Pin out Bottom View Functional Block Diagr am PIN 2 (D+) PIN 3 (D-) PIN 4 (ID) PI N 1 (V BUS) PIN 5,6 (GND) Life Support Note: Not Intended for Use in Life Sup port or Life Saving Applications The pr oducts shown herein are not designed fo r use in life sustaining or life saving applications unless otherwise expressl y indicated. Description The SP1255P i ntegrates three channels of ultra-low c apacitance steering diodes and a low vo ltage TVS diode to provide maximum prot ection of the USB data and ID pins agai nst ESD per the IEC 61000-4-2 standard. An additional 12V TVS diode is include d to provide lightning surge tphreotIeE cCtio6n10fo0r0t-4h-e5UsStaBndVaBUrdS .p TinheupSPto1215050PAp(trPo=v8id/2e0sμs su)ppeerrior protection for current int ensive applications such as fast chargi ng peripharals. The SP1255P comes in a space saving 2.0x1.8mm μDFN.
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