SSM3K35CTC MOSFET Datasheet

SSM3K35CTC Datasheet PDF, Equivalent


Part Number

SSM3K35CTC

Description

Silicon N-Channel MOSFET

Manufacture

Toshiba

Total Page 9 Pages
PDF Download
Download SSM3K35CTC Datasheet PDF


SSM3K35CTC
MOSFETs Silicon N-Channel MOS
SSM3K35CTC
1. Applications
• High-Speed Switching
• Analog Switches
2. Features
(1) 1.2-V gate drive voltage.
(2) Low drain-source on-resistance
RDS(ON) = 9.0 (max) (@VGS = 1.2 V, ID = 10 mA)
RDS(ON) = 3.1 (max) (@VGS = 1.5 V, ID = 20 mA)
RDS(ON) = 2.4 (max) (@VGS = 1.8 V, ID = 150 mA)
RDS(ON) = 1.6 (max) (@VGS = 2.5 V, ID = 150 mA)
RDS(ON) = 1.1 (max) (@VGS = 4.5 V, ID = 150 mA)
3. Packaging and Pin Assignment
CST3C
SSM3K35CTC
1: Gate
2: Source
3: Drain
©2016-2017
Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2015-04
2017-12-04
Rev.3.0

SSM3K35CTC
SSM3K35CTC
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 20 V
Gate-source voltage
VGSS
±10
Drain current
(Note 1)
ID
250 mA
Drain current (pulsed)
(Note 1)
IDP
600
Power dissipation
(Note 2)
PD
500 mW
Channel temperature
Tch 150
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: Device mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm ,Cu pad: 645 mm2)
Note:
Note:
The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables,
operators, soldering irons and other objects should be protected against anti-static discharge.
The channel-to-ambient thermal resistance, Rth(ch-a), and the drain power dissipation, PD, vary according to
the board material, board area, board thickness and pad area. When using this device, be sure to take heat
dissipation fully into account.
©2016-2017
Toshiba Electronic Devices & Storage Corporation
2
2017-12-04
Rev.3.0


Features MOSFETs Silicon N-Channel MOS SSM3K35CTC 1. Applications • High-Speed Switchi ng • Analog Switches 2. Features (1) 1.2-V gate drive voltage. (2) Low drain -source on-resistance RDS(ON) = 9.0 Ω (max) (@VGS = 1.2 V, ID = 10 mA) RDS(ON) = 3.1 Ω (max) (@VGS = 1.5 V, ID = 20 mA) RDS(ON) = 2.4 Ω (max) (@VGS = 1.8 V, ID = 150 mA) RDS(ON) = 1.6 Ω (max) (@VGS = 2.5 V, ID = 15 0 mA) RDS(ON) = 1.1 Ω (max) (@VGS = 4.5 V, ID = 150 mA) 3. Packaging and Pin Assignment CST3C SSM3K35CTC 1: Gat e 2: Source 3: Drain ©2016-2017 Toshi ba Electronic Devices & Storage Corpora tion 1 Start of commercial production 2015-04 2017-12-04 Rev.3.0 SSM3K35CTC 4. Absolute Maximum Ratings (Note) (U nless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS 20 V Gate -source voltage VGSS ±10 Drain curr ent (Note 1) ID 250 mA Drain curren t (pulsed) (Note 1) IDP 600 Power d issipation (Note 2) PD 500 mW Channel temperature Tch 150  Storage temperature Tstg.
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