SIGC25T60SNC IGBT Datasheet

SIGC25T60SNC Datasheet PDF, Equivalent


Part Number

SIGC25T60SNC

Description

IGBT

Manufacture

Infineon

Total Page 4 Pages
Datasheet
Download SIGC25T60SNC Datasheet


SIGC25T60SNC
IGBT Chip in NPT-technology
FEATURES:
600V NPT technology
100µm chip
short circuit prove
positive temperature coefficient
easy paralleling
SIGC25T60SNC
This chip is used for:
SGP30N60
Applications:
drives
C
G
E
Chip Type
SIGC25T60SNC
SIGC25T60SNC
VCE
ICn
Die Size
600V 30A 4.5 x 5.71 mm2
600V 30A 4.5 x 5.71 mm2
Package Ordering Code
sawn on foil
unsawn
Q67041-A4667-
A001
Q67041-A4667-
A002
MECHANICAL PARAMETER:
Raster size
Area total / active
Emitter pad size
Gate pad size
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Emitter metallization
Collector metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
4.5 x 5.71
mm2
25.7 / 21.4
2x( 2.18x1.58 )
0.68 x 1.08
100 µm
150 mm
90 deg
566
Photoimide
3200 nm Al Si 1%
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, 500µm
0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD HV3, L 7262-S, Edition 2, 28.11.2003

SIGC25T60SNC
SIGC25T60SNC
MAXIMUM RATINGS:
Parameter
Symbol
Value
Unit
Collector-emitter voltage, Tj=25 °C
VCE
600 V
DC collector current, limited by Tjmax
IC 1) A
Pulsed collector current, tp limited by Tjmax
Icpuls
90 A
Gate emitter voltage
VGE
±20 V
Operating junction and storage temperature
1 ) depending on thermal properties of assembly
Tj, Tstg
-55 ... +150
°C
STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified:
Parameter
Symbol
Conditions
Value
Unit
min. typ. max.
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
V(BR)CES
VGE=0V, IC=500µA
600
VCE(sat)
VGE=15V, IC=30A
1.6 2
2.5 V
VGE(th)
IC=700µA, VGE=VCE
3
4
5
ICES
VCE=600V, VGE=0V
2.2 µA
Gate-emitter leakage current
IGES
VCE=0V, VGE=20V
120 nA
DYNAMIC CHARACTERISTICS (tested at component):
Paramete r
Symbol
Conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
Ci s s
Co s s
Cr s s
V C E= 2 5 V
VGE=0V
f=1MHz
min.
-
-
-
Value
Unit
typ. max.
1600 1920 pF
150 180
92 110
SWITCHING CHARACTERISTICS (tested at component), Inductive Load:
Parameter
Symbol
Conditions 2)
Value
Unit
min. typ. max.
Turn-on delay time
Rise time
td(on)
tr
Tj=150°C
VCC=400V
IC=30A
- 44 53 ns
- 34 40
Turn-off delay time
Fall time
td(off)
tf
VGE=+15/0V
RG= 1 1
- 324 389
- 67 80
2) switching conditions different to 600V Standard IGBT 2, under comparable switching conditions 40% faster
turnoff than Standard IGBT 2. Values also influenced by parasitic L- and C- in measurement and package.
Edited by INFINEON Technologies AI PS DD HV3, L 7262-S, Edition 2, 28.11.2003


Features IGBT Chip in NPT-technology FEATURES: 600V NPT technology • 100µm chip short circuit prove • positive tem perature coefficient • easy paralleli ng SIGC25T60SNC This chip is used for : • SGP30N60 Applications: • drives C G E Chip Type SIGC25T60SNC SIGC25T 60SNC VCE ICn Die Size 600V 30A 4.5 x 5.71 mm2 600V 30A 4.5 x 5.71 mm2 P ackage Ordering Code sawn on foil unsa wn Q67041-A4667A001 Q67041-A4667A002 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pa d size Thickness Wafer size Flat positi on Max.possible chips per wafer Passiva tion frontside Emitter metallization Co llector metallization Die bond Wire bon d Reject Ink Dot Size Recommended Stora ge Environment 4.5 x 5.71 mm2 25.7 / 21.4 2x( 2.18x1.58 ) 0.68 x 1.08 10 0 µm 150 mm 90 deg 566 Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –sys tem suitable for epoxy and soft solder die bonding electrically conductive gl ue or solder Al, ≤500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry.
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