Silicon Transistors. 2N5796AU Datasheet

2N5796AU Transistors. Datasheet pdf. Equivalent

2N5796AU Datasheet
Recommendation 2N5796AU Datasheet
Part 2N5796AU
Description PNP Dual Silicon Transistors
Feature 2N5796AU; 2N5795, 2N5795A, 2N5796 2N5796A, 2N5796AU, 2N5796U PNP Dual Silicon Transistors Features • Available.
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Datasheet
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VPT 2N5796AU
2N5795, 2N5795A, 2N5796
2N5796A, 2N5796AU, 2N5796U
PNP Dual Silicon Transistors
Features
Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF-
19500/496
TO-78 and U package types
Radiation Tolerant Levels M, D, P, L, and R
Rev. V3
Electrical Characteristics (+25oC unless otherwise specified)
Parameter
Off Characteristics
Collector - Emitter Breakdown Voltage
Collector - Base Cutoff Current
Emitter - Base Cutoff Current
On Characteristics1
Forward Current Transfer Ratio
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
Forward-Current Transfer Ratio
(Gain Ratio)
(2N5795A, 2N5796A)
Test Conditions
IC = 10 mA dc
VCB = 60 V dc
VCB = 50 V dc
VEB = 5.0 V dc
VEB = 3.0 V dc
2N5795, 2N5795A
VCE = 10 V dc; IC = 0.1 mA dc
VCE = 10 V dc; IC = 1.0 mA dc
VCE = 10 V dc; IC = 10 mA dc
VCE = 10 V dc; IC = 150 mA dc
VCE = 10 V dc; IC = 300 mA dc
VCE = 1.0 V dc; IC = 150 mA dc
2N5796, 2N5796U
2N5796A
VCE = 10 V dc; IC = 0.1 mA dc
VCE = 10 V dc; IC = 1.0 mA dc
VCE = 10 V dc; IC = 10 mA dc
VCE = 10 V dc; IC = 150 mA dc
VCE = 10 V dc; IC = 300 mA dc
VCE = 1.0 V dc; IC = 150 mA dc
IC = 150 mA dc; IB = 15 mA dc
IC = 500 mA dc; IB = 50 mA dc
IC = 150 mA dc; IB = 15 mA dc
IC = 500 mA dc; IB = 50 mA dc
VCE = 10 V dc; IC = 10 mA dc
Symbol Units Min. Max.
V(BR)CEO V dc
ICBO1
ICBO2
IEBO1
IEBO2
µA dc
nA dc
µA dc
nA dc
60
10
10
10
100
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
hFE
40
40
40
40
20
20
75
100
100
100
50
50
150
300
VCE(SAT)1
VCE(SAT)2
Vdc
VBE(SAT)1 Vdc
VBE(SAT)2 Vdc
hFE2-1
—––
hFE2-2
0.9
0.4
1.6
1.3
2.6
1.1
1. Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤2.0%.
1
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com



VPT 2N5796AU
2N5795, 2N5795A, 2N5796
2N5796A, 2N5796AU, 2N5796U
PNP Dual Silicon Transistors
Electrical Characteristics (+25oC unless otherwise specified)
Parameter
Test Conditions
Forward-Current Transfer Ratio
(Gain Ratio)
(2N5795A, 2N5796A)
VCE = 10 V dc; IC = 10 mA dc
Absolute Value of Base Emitter-Voltage
Differential
(2N5795A, 2N5796A )
Collector-Base Cutoff Current
Forward Current Transfer Ratio
VCE = 10 V dc; IC = 1 mA dc
TA = +150oC
VCB = 50 V dc
TA = -55oC
2N5795, 2N5795A
2N5796, 2N5796U, 2N5796UC
2N5796, 2N5796AUC
Symbol Units Min.
hFE3-1
—––
hFE3-2
0.9
|VBE1-VBE2| mV dc
ICBO3
µA
hFE7
16
40
40
Rev. V3
Max.
1.1
10
10
Collector One to Collector Two Leakage
Current
V(1C-2C) = +50 V dc
1(1C-2C) nA dc
Dynamic Characteristics
Magnitude of Common
Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 20 mA dc, VCE = 20 V dc, f = 100 MHz | hFE | -
Open Circuit Output Capacitance VCB = 10 V dc, IE = 0 mA , 100 kHz ≤ f ≤ 1 MHz Cobo pF
Input Capacitance
(Output Open-Circuited)
VEB = 2.0 V dc; IC = 0 mA; 100 kHz ≤ f ≤ 1 MHz Cibo pF
Switching Characteristics
Turn-On Time (saturated)
VCC = 30 V dc; IC = 150 mA dc; IB1 = 15 mA dc ton
ns
2.0
Turn-Off Time (saturated)
VCC = 30 Vdc; IC = 150 mA dc; IB1 = IB2 = 15 mA dc toff
ns
+1
10
8.0
30
50
140
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com



VPT 2N5796AU
2N5795, 2N5795A, 2N5796
2N5796A, 2N5796AU, 2N5796U
PNP Dual Silicon Transistors
Absolute Maximum Ratings
Ratings
Collector - Emitter Voltage
Symbol
VCEO
Value
60 V dc
Rev. V3
Collector - Base Voltage
VCBO
60 V dc
Emitter - Base Voltage
Collector Current
Total Power Dissipation
@ TA = +25°C
One Section
Total Device
Operating & Storage Temperature Range
VEBO
IC
P (1) (2)
T
TJ, TSTG
5.0 V dc
-600 mA dc
0.5 W
0.6 W
-65°C to +175°C
Thermal Characteristics
Types
2N5795, 2N5796
2N5795A, 2N5796A
RᶱJA
RᶱJA
One Section Both Sections
oC/W (2) (3)
350
350
oC/W (2) (3)
290
290
RᶱJSP
One Section
oC/W (2) (3)
RᶱJSP
RᶱJPCB
RᶱJPCB
Both Sections One Section Both Sections
oC/W (2) (3)
oC/W (2) (3)
oC/W (2) (3)
2N5796U
2N5796AU
110 90 350 290
110 90 350 290
(1) For TA > 25oC, derate linearly 2.86 mW/oC one section, 3.43 mW/oC total.
(2) For 2N5795, 2N5795A, 2N5796, 2N5796A, 2N5796U devices.
(3) For thermal impedance curves see figures 4, 5 and 6 of MIL-PRF-19500/496
3
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com





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