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PIN Photodiode. VEMD5110X01 Datasheet |
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www.vishay.com
VEMD5110X01
Vishay Semiconductors
Silicon PIN Photodiode
DESCRIPTION
VEMD5110X01 is a high speed and high sensitive PIN
photodiode. It is a low profile surface mount device (SMD)
including the chip with a 7.5 mm2 sensitive area and a
daylight blocking filter matched with IR emitters operating at
wavelength 870 nm or 950 nm.
FEATURES
• Package type: surface mount
• Package form: top view
• Dimensions (L x W x H in mm): 5 x 4 x 0.9
• Radiant sensitive area (in mm2): 7.5
• AEC-Q101 qualified
• High radiant sensitivity
• Daylight blocking filter matched with 870 nm
to 950 nm emitters
• Fast response times
• Angle of half sensitivity: ϕ = ± 65°
• Floor life: 72 h, MSL 4, according to J-STD-020
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• High speed detector for infrared radiation
• Infrared remote control and free air
transmissionsystems, e.g. road cash systems
• Photodiode for smoke detectors
• Photodiode for rain sensors
data
PRODUCT SUMMARY
COMPONENT
VEMD5110X01
Ira (μA)
48
Note
• Test conditions see table “Basic Characteristics”
ϕ (deg)
± 65
λ0.5 (nm)
790 to 1050
ORDERING INFORMATION
ORDERING CODE
VEMD5110X01
VEMD5110X01-GS15
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
REMARKS
MOQ: 1000 pcs, 1000 pcs/reel
MOQ: 5000 pcs, 5000 pcs/reel
PACKAGE FORM
Top view
Top view
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
Reverse voltage
Power dissipation
Junction temperature
Tamb ≤ 25 °C
Operating temperature range
Storage temperature range
Soldering temperature
Acc. reflow sloder profile fig. 8
Thermal resistance junction/ambient
ESD safety HBM
± 2000 V, 1.5 kΩ, 100 pF, 3 pulses
VR
PV
Tj
Tamb
Tstg
Tsd
RthJA
ESDHBM
20
215
110
-40 to +110
-40 to +110
260
350
≥2
UNIT
V
mW
°C
°C
°C
°C
K/W
kV
Rev. 1.1, 21-Mar-16
1 Document Number: 84204
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
www.vishay.com
VEMD5110X01
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Forward voltage
IF = 50 mA
VF
Breakdown voltage
IR = 100 μA, E = 0
V(BR)
20
Reverse dark current
VR = 10 V, E = 0
Iro
Diode capacitance
Open circuit voltage
Temperature coefficient of Vo
Short circuit current
Temperature coefficient of Ik
Reverse light current
Angle of half sensitivity
VR = 0 V, f = 1 MHz, E = 0
VR = 3 V, f = 1 MHz, E = 0
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V
CD
CD
Vo
TKVo
Ik
TKIk
Ira
ϕ
40
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
Rise time
Fall time
VR = 10 V, λ = 950 nm
VR = 10 V, RL = 1 kΩ, λ = 820 nm
VR = 10 V, RL = 1 kΩ, λ = 820 nm
λp
λ 0.5
NEP
tr
tf
TYP.
1
2
70
25
350
-2.6
45
0.1
48
± 65
940
790 to 1050
4 x 10-14
100
100
MAX.
1.3
30
40
UNIT
V
V
nA
pF
pF
mV
mV/K
μA
%/K
μA
deg
nm
nm
W/√Hz
ns
ns
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Basic characteristics graphs to be extended to 110 °C ambient temperatures where applicable.
1000
100
10
1
20
94 8403
VR = 10 V
40 60 80 100
Tamb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
1.4
1.2 VR = 5 V
λ = 950 nm
1.0
0.8
0.6
0
94 8409
20 40 60 80 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Rev. 1.1, 21-Mar-16
2 Document Number: 84204
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
www.vishay.com
1000
100
10
VR = 5 V
1 λ = 950 nm
0.1
0.01
12787
0.1 1
Ee - Irradiance (mW/cm2)
10
Fig. 3 - Reverse Light Current vs. Irradiance
100
1 mW/cm2
0.5 mW/cm2
0.2 mW/cm2
10
0.1 mW/cm2
0.05 mW/cm2
12788
1
0.1
λ = 950 nm
1 10
VR - Reverse Voltage (V)
100
Fig. 4 - Reverse Light Current vs. Reverse Voltage
80
60
E=0
f = 1 MHz
40
20
0
0.1
948407
1 10
VR - Reverse Voltage (V)
100
Fig. 5 - Diode Capacitance vs. Reverse Voltage
VEMD5110X01
Vishay Semiconductors
1.2
1.0
0.8
0.6
0.4
0.2
0.0
750
94 8426
850 950 1050
λ - Wavelength (nm)
1150
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
0° 10° 20°
30°
40°
1.0
0.9 50°
0.8 60°
70°
0.7
80°
0.6 0.4 0.2
94 8406
0
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
Rev. 1.1, 21-Mar-16
3 Document Number: 84204
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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