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FFSP08120A

ON Semiconductor
Part Number FFSP08120A
Manufacturer ON Semiconductor
Description Silicon Carbide Schottky Diode
Published Nov 7, 2019
Detailed Description FFSP08120A — Silicon Carbide Schottky Diode FFSP08120A Silicon Carbide Schottky Diode 1200 V, 8 A Features • Max Juncti...
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FFSP08120A
FFSP08120A

Overview
FFSP08120A — Silicon Carbide Schottky Diode FFSP08120A Silicon Carbide Schottky Diode 1200 V, 8 A Features • Max Junction Temperature 175 °C • Avalanche Rated 80 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of Paralleling • No Reverse Recovery / No Forward Recovery Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits November 2016 Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon.
No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carb...


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