FFSP08120A Diode Datasheet

FFSP08120A Datasheet PDF, Equivalent


Part Number

FFSP08120A

Description

Silicon Carbide Schottky Diode

Manufacture

ON Semiconductor

Total Page 6 Pages
PDF Download
Download FFSP08120A Datasheet PDF


FFSP08120A
FFSP08120A
Silicon Carbide Schottky Diode
1200 V, 8 A
Features
• Max Junction Temperature 175 °C
• Avalanche Rated 80 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery / No Forward Recovery
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
November 2016
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and
higher reliability compared to Silicon. No reverse recovery
current, temperature independent switching characteristics, and
excellent thermal performance sets Silicon Carbide as the next
generation of power semiconductor. System benefits include
highest efficiency, faster operating frequency, increased power
density, reduced EMI, and reduced system size & cost.
1
2
TO-220-2L
1. Cathode 2. Anode
1. Cathode
2. Anode
Absolute Maximum Ratings TC = 25 °C unless otherwise noted.
Symbol
Parameter
VRRM
EAS
IF
IF, Max
IF,SM
IF,RM
Ptot
TJ, TSTG
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy
(Note 1)
Continuous Rectified Forward Current @ TC < 148 °C
Non-Repetitive Peak Forward Surge Cur- TC = 25 °C, 10 μs
rent TC = 150 °C, 10 μs
Non-Repetitive Forward Surge Current
Half-Sine Pulse, tp = 8.3 ms
Repetitive Forward Surge Current
Half-Sine Pulse, tp = 8.3 ms
Power Dissipation
TC = 25 °C
TC = 150 °C
Operating and Storage Temperature Range
Thermal Characteristic
Symbol
RθJC
Parameter
Thermal Resistance, Junction to Case, Max
FFSP08120A
1200
80
8
530
480
68
32
166
27
-55 to +175
FFSP08120A
0.9
Unit
V
mJ
A
A
A
A
A
W
W
°C
Unit
°C/W
Semiconductor Components Industries, LLC, 2016
FFSP08120A Rev.1.1
1
www.onsemi.com

FFSP08120A
Package Marking and Ordering Information
Part Number
FFSP08120A
Top Mark
FFSP08120A
Package
TO-220-2L
Packing Method
Tube
Electrical Characteristics TC = 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
IF = 8 A, TC = 25 oC
IF = 8 A, TC = 125 oC
IF = 8 A, TC = 175 oC
VR = 1200 V, TC = 25 oC
VR = 1200 V, TC = 125 oC
VR = 1200 V, TC = 175 oC
V = 800 V
VR = 1 V, f = 100 kHz
VR = 400 V, f = 100 kHz
VR = 800 V, f = 100 kHz
Notes:
1: EAS of 80 mJ is based on starting TJ = 25 °C, L = 0.5 mH, IAS = 18 A, V = 150 V.
Reel Size Tape Width
N/A N/A
Quantity
50 units
Min.
-
-
-
-
-
-
-
-
-
-
Typ.
1.45
1.7
2
-
-
-
55
538
50
40
Max.
1.75
2
2.4
200
300
400
-
-
-
-
Unit
V
μA
nC
pF
Typical Characteristics TJ = 25 °C unless otherwise noted.
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
15
TJ = -55 oC
TJ = 25 oC
TJ = 75 oC
10
TJ = 125 oC
TJ = 175 oC
5
0
012
VF, FORWARD VOLTAGE (V)
Figure 3. Reverse Characteristics
3
101
TJ = 175 oC
100
TJ = 125 oC
10-1
10-2
10-3
200
TJ = 75 oC
TJ = 25 oC
TJ = -55 oC
400 600 800 1000 1200
VR, REVERESE VOLTAGE (V)
Figure 4. Current Derating
1.0
TJ = 175 oC
0.8 TJ = 125 oC
TJ = 75 oC
0.6 TJ = 25 oC
TJ = -55 oC
0.4
0.2
0.0
1000
1100 1200 1300 1400
VR, REVERSE VOLTAGE (V)
1500
Semiconductor Components Industries, LLC, 2016
FFSP08120A Rev.1.1
2
140
120 D = 0.1
100
80 D = 0.2
D = 0.3
60
D = 0.5
40
20 D = 0.7 D = 1
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
175
www.onsemi.com


Features FFSP08120A — Silicon Carbide Schottky Diode FFSP08120A Silicon Carbide Schot tky Diode 1200 V, 8 A Features • Max Junction Temperature 175 °C • Avalan che Rated 80 mJ • High Surge Current Capacity • Positive Temperature Coeff icient • Ease of Paralleling • No R everse Recovery / No Forward Recovery A pplications • General Purpose • SMP S, Solar Inverter, UPS • Power Switch ing Circuits November 2016 Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that pr ovides superior switching performance a nd higher reliability compared to Silic on. No reverse recovery current, temper ature independent switching characteris tics, and excellent thermal performance sets Silicon Carbide as the next gener ation of power semiconductor. System be nefits include highest efficiency, fast er operating frequency, increased power density, reduced EMI, and reduced syst em size & cost. 1 2 TO-220-2L 1. Cat hode 2. Anode 1. Cathode 2. Anode Absolute Maximum Ratings TC = 25 °C unless othe.
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