FFSB2065B-F085 Diode Datasheet

FFSB2065B-F085 Datasheet PDF, Equivalent


Part Number

FFSB2065B-F085

Description

Silicon Carbide Schottky Diode

Manufacture

ON Semiconductor

Total Page 6 Pages
PDF Download
Download FFSB2065B-F085 Datasheet PDF


FFSB2065B-F085
FFSB2065B-F085
Silicon Carbide Schottky
Diode
650 V, 20 A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size & cost.
Features
Max Junction Temperature 175°C
Avalanche Rated 94 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery/No Forward Recovery
AECQ101 Qualified and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Automotive HEVEV Onboard Chargers
Automotive HEVEV DCDC Converters
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Value Unit
VRRM
EAS
IF
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy (Note 1)
Continuous Rectified Forward Current
@ TC < 142°C
650 V
94 mJ
20 A
Continuous Rectified Forward Current
@ TC < 135°C
22.8
IF, Max NonRepetitive Peak
Forward Surge Current
IF, SM
NonRepetitive Forward
Surge Current TC = 25°C
TC = 25°C, 10 ms
TC = 150°C, 10 ms
HalfSine Pulse,
tp = 8.3 ms
882
798
84
A
A
Ptot Power Dissipation
TC = 25°C
153 W
TC = 150°C
25.5
TJ,
TSTG
Operating Junction and Storage Temperature
Range
55 to °C
+175
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. EAS of 94 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 19.4 A, V = 50 V.
© Semiconductor Components Industries, LLC, 2018
March, 2019 Rev. 1
1
www.onsemi.com
1., 3. Cathode 2. Anode
Schottky Diode
3
1
2
D2PAK3 (TO263, 3 LD)
CASE 418AJ
MARKING DIAGRAM
$Y&Z&3&K
FFSB
2065B
$Y
&Z
&3
&K
FFSB2065B
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Publication Order Number:
FFSB2065BF085/D

FFSB2065B-F085
FFSB2065BF085
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC Thermal Resistance, Junction to Case, Max
Ratings
0.98
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VF Forward Voltage
IF = 20 A, TC = 25°C
1.38 1.7
V
IF = 20 A, TC = 125°C
1.6 2.0
IF = 20 A, TC = 175°C
1.72 2.4
IR Reverse Current
VR = 650 V, TC = 25°C
0.5 40 mA
VR = 650 V, TC = 125°C
1 80
VR = 650 V, TC = 175°C
2 160
QC Total Capacitive Charge
V = 400 V
51 nC
Ctot Total Capacitance
VR = 1 V, f = 100 kHz
866
pF
VR = 300 V, f = 100 kHz
80
VR = 600 V, f = 100 kHz
70
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number
Top Marking
Package
Shipping
FFSB2065BF085
FFSB2065B
D2PAK3
800/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2


Features FFSB2065B-F085 Silicon Carbide Schottky Diode 650 V, 20 A Description Silicon Carbide (SiC) Schottky Diodes use a co mpletely new technology that provides s uperior switching performance and highe r reliability compared to Silicon. No r everse recovery current, temperature in dependent switching characteristics, an d excellent thermal performance sets Si licon Carbide as the next generation of power semiconductor. System benefits i nclude highest efficiency, faster opera ting frequency, increased power density , reduced EMI, and reduced system size & cost. Features • Max Junction Tempe rature 175°C • Avalanche Rated 94 mJ • High Surge Current Capacity • Po sitive Temperature Coefficient • Ease of Paralleling • No Reverse Recovery /No Forward Recovery • AEC−Q101 Qua lified and PPAP Capable • These Devic es are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications Automotive HEV−EV Onboard Chargers • Automotive HEV−EV DC−DC Converters ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwi.
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