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FFSB10120A-F085 Diode Datasheet |
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| Part Number | FFSB10120A-F085 |
| Description | Silicon Carbide Schottky Diode |
| Manufacture | ON Semiconductor |
| Total Page | 6 Pages |
| PDF Download |
FFSB10120A-F085
Silicon Carbide Schottky
Diode
1200 V, 10 A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
Features
• Max Junction Temperature 175°C
• Avalanche Rated 100 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery/No Forward Recovery
• AEC−Q101 qualified
Applications
• Automotive HEV−EV Onboard Chargers
• Automotive HEV−EV DC−DC Converters
www.onsemi.com
1.,3. Cathode 2. Anode
Schottky Diode
3
1
2
D2PAK−3(TO−263, 3−LEAD)
CASE 418AJ
MARKING DIAGRAM
$Y&Z&3&K
FFSB
10120A
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FFSB10120A = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2
of this data sheet.
© Semiconductor Components Industries, LLC, 2013
September, 2019 − Rev. 0
1
Publication Order Number:
FFSB10120A−F085/D
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FFSB10120A−F085
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Ratings
Unit
VRRM
Peak Repetitive Reverse Voltage
1200
V
EAS Single Pulse Avalanche Energy
IF Continuous Rectified Forward Current @ TC < 164°C
(Note 1)
100
10
mJ
A
IF, Max
Continuous Rectified Forward Current @ TC < 135°C
Non−Repetitive Peak Forward Surge Current
TC = 25°C, 10 ms
21
850 A
TC = 150°C, 10 ms
800
IF, SM
IF, RM
Ptot
Non−Repetitive Forward Surge Current
Repetitive Forward Surge Current
Power Dissipation
Half−Sine Pulse, tp = 8.3 ms
Half−Sine Pulse, tp = 8.3 ms
TC = 25°C
90
35
283
A
A
W
TC = 150°C
47 W
TJ, TSTG
Operating and Storage Temperature Range
TO247 Mounting Torque, M3 Screw
−55 to +175
60
°C
Ncm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
Thermal Resistance, Junction to Case, Max
Ratings
0.53
Unit
°C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Shipping†
FFSB10120A−F085
FFSB10120A
D2PAK
800 Units/
Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Unit
VF Forward Voltage
IF = 10 A, TC = 25°C
−
1.45 1.75
V
IF = 10 A, TC = 125°C
− 1.7 2
IF = 10 A, TC = 175°C
− 2 2.4
IR Reverse Current
VR = 1200 V, TC = 25°C
− − 200 mA
VR = 1200 V, TC = 125°C
− − 300
VR = 1200 V, TC = 175°C
− − 400
QC Total Capacitive Charge
V = 800 V
− 62 − nC
C Total Capacitance
VR = 1 V, f = 100 kHz
− 612 − pF
VR = 400 V, f = 100 kHz
− 58 −
VR = 800 V, f = 100 kHz
− 47 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. EAS of 100 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 20 A, V = 50 V.
www.onsemi.com
2
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| Features | FFSB10120A-F085 Silicon Carbide Schottky Diode 1200 V, 10 A Description Silicon Carbide (SiC) Schottky Diodes use a co mpletely new technology that provides s uperior switching performance and highe r reliability compared to Silicon. No r everse recovery current, temperature in dependent switching characteristics, an d excellent thermal performance sets Si licon Carbide as the next generation of power semiconductor. System benefits i nclude highest efficiency, faster opera ting frequency, increased power density , reduced EMI, and reduced system size and cost. Features • Max Junction Tem perature 175°C • Avalanche Rated 100 mJ • High Surge Current Capacity • Positive Temperature Coefficient • E ase of Paralleling • No Reverse Recov ery/No Forward Recovery • AEC−Q101 qualified Applications • Automotive H EV−EV Onboard Chargers • Automotive HEV−EV DC−DC Converters www.onsem i.com 1.,3. Cathode 2. Anode Schottky D iode 3 1 2 D2PAK−3(TO−263, 3−LEAD) CASE 418AJ MARKING DIAGRAM $Y&Z&3&K FFSB 10120A $Y = O. |
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