TK31V60X MOSFET Datasheet

TK31V60X Datasheet PDF, Equivalent


Part Number

TK31V60X

Description

Silicon N-Channel MOSFET

Manufacture

Toshiba

Total Page 10 Pages
PDF Download
Download TK31V60X Datasheet PDF


TK31V60X
MOSFETs Silicon N-Channel MOS (DTMOS-H)
TK31V60X
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.078 (typ.)
by used to Super Junction Structure : DTMOS
(2) High-speed switching properties with lower capacitance.
(3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.5 mA)
3. Packaging and Internal Circuit
TK31V60X
DFN8x8
1: Gate
2: Source1
3,4: Source2
5: Drain (Heatsink)
Notice:
Please use the source1 pin for
gate input signal return. Make
sure that the main current flows
into the source2 pins.
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 600 V
Gate-source voltage
VGSS
±30
Drain current (DC)
(Note 1)
ID
30.8 A
Drain current (pulsed)
(Note 1)
IDP
123
Power dissipation
(Tc = 25)
PD 240 W
Single-pulse avalanche energy
(Note 2)
EAS
338 mJ
Avalanche current
IAR 7.7 A
Reverse drain current (DC)
(Note 1)
IDR
30.8
Reverse drain current (pulsed)
(Note 1)
IDRP
123
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2014-02
1 2014-02-28
Rev.2.0

TK31V60X
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25(initial), L = 10 mH, RG = 25 , IAR = 7.7 A
TK31V60X
Symbol
Rth(ch-c)
Max Unit
0.52 /W
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2 2014-02-28
Rev.2.0


Features MOSFETs Silicon N-Channel MOS (DTMOS- H) TK31V60X 1. Applications • Switchi ng Voltage Regulators 2. Features (1) L ow drain-source on-resistance: RDS(ON) = 0.078 Ω (typ.) by used to Super Jun ction Structure : DTMOS (2) High-speed switching properties with lower capacit ance. (3) Enhancement mode: Vth = 2.5 t o 3.5 V (VDS = 10 V, ID = 1.5 mA) 3. Pa ckaging and Internal Circuit TK31V60X DFN8x8 1: Gate 2: Source1 3,4: Source 2 5: Drain (Heatsink) Notice: Please us e the source1 pin for gate input signal return. Make sure that the main curren t flows into the source2 pins. 4. Abso lute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Character istics Symbol Rating Unit Drain-sou rce voltage VDSS 600 V Gate-source vo ltage VGSS ±30 Drain current (DC) (Note 1) ID 30.8 A Drain current (pu lsed) (Note 1) IDP 123 Power dissip ation (Tc = 25) PD 240 W Single-p ulse avalanche energy (Note 2) EAS 3 38 mJ Avalanche current IAR 7.7 A Reverse drain current (DC) (Note 1) .
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