TK25N60X5 MOSFET Datasheet

TK25N60X5 Datasheet PDF, Equivalent


Part Number

TK25N60X5

Description

Silicon N-Channel MOSFET

Manufacture

Toshiba

Total Page 10 Pages
Datasheet
Download TK25N60X5 Datasheet


TK25N60X5
MOSFETs Silicon N-Channel MOS (DTMOS-H)
TK25N60X5
1. Applications
• Switching Voltage Regulators
2. Features
(1) Fast reverse recovery time: trr = 120 ns(typ.)
(2) Low drain-source on-resistance: RDS(ON) = 0.12 (typ.)
(3) Easy to control Gate switching
(4) Enhancement mode: Vth = 3 to 4.5 V(VDS = 10 V, ID = 1.2 mA)
3. Packaging and Internal Circuit
TK25N60X5
1: Gate
2: Drain (Heatsink)
3: Source
TO-247
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
Storage temperature
Mounting torque
(Tc = 25 )
(Note 1)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
VDSS
VGSS
ID
IDP
PD
EAS
IAR
IDR
IDRP
Tch
Tstg
TOR
600
±30
25
100
180
305
6.2
25
100
150
-55 to 150
0.8
V
A
W
mJ
A
Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2014-09
©2015 Toshiba Corporation
1
2015-12-23
Rev.2.0

TK25N60X5
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: VDD = 90 V, Tch = 25 (initial), L = 13.9 mH, RG = 25 , IAR = 6.2 A
TK25N60X5
Symbol
Rth(ch-c)
Rth(ch-a)
Max
0.694
50
Unit
/W
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
©2015 Toshiba Corporation
2
2015-12-23
Rev.2.0


Features MOSFETs Silicon N-Channel MOS (DTMOS- H) TK25N60X5 1. Applications • Switch ing Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 120 n s(typ.) (2) Low drain-source on-resista nce: RDS(ON) = 0.12 Ω(typ.) (3) Easy to control Gate switching (4) Enhanceme nt mode: Vth = 3 to 4.5 V(VDS = 10 V, I D = 1.2 mA) 3. Packaging and Internal C ircuit TK25N60X5 1: Gate 2: Drain (He atsink) 3: Source TO-247 4. Absolute Maximum Ratings (Note) (Ta = 25  unl ess otherwise specified) Characteristi cs Symbol Rating Unit Drain-source voltage Gate-source voltage Drain curre nt (DC) Drain current (pulsed) Power di ssipation Single-pulse avalanche energy Avalanche current Reverse drain curren t (DC) Reverse drain current (pulsed) C hannel temperature Storage temperature Mounting torque (Tc = 25 ) (Note 1 ) (Note 1) (Note 2) (Note 1) (Note 1) VDSS VGSS ID IDP PD EAS IAR IDR IDRP Tc h Tstg TOR 600 ±30 25 100 180 305 6.2 25 100 150 -55 to 150 0.8 V A W mJ A  Nm Note: Using continuously un.
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