FGH30S150P IGBT Datasheet

FGH30S150P Datasheet PDF, Equivalent


Part Number

FGH30S150P

Description

IGBT

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
PDF Download
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FGH30S150P
March 2016
FGH30S150P
1500 V, 30 A Shorted-anode IGBT
Features
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 1.85 V @ IC = 30 A
• High Input Impedance
• RoHS Compliant
Applications
• Induction Heating, Microwave Oven
General Description
Using advanced field stop trench and shorted-anode technol-
ogy, Fairchild’s shorted-anode trench IGBTs offer superior con-
duction and switching performances for soft switching
applications. The device can operate in parallel configuration
with exceptional avalanche capability. This device is designed
for induction heating and microwave oven.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ICM (1)
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
IF
Diode Continuous Forward Current
@ TC = 25oC
IF
Diode Continuous Forward Current
@ TC = 100oC
PD
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
TJ Operating Junction Temperature
Tstg Storage Temperature Range
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
Notes:
1: Limited by Tjmax
C
G
E
Ratings
1500
±25
60
30
90
60
30
500
250
-55 to +175
-55 to +175
300
Typ.
--
--
Max.
0.3
40
Unit
V
V
A
A
A
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
©2015 Fairchild Semiconductor Corporation
FGH30S150P Rev. 1.1
1
www.fairchildsemi.com

FGH30S150P
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
FGH30S150P
FGH30S150P
TO-247
-
Tape Width
-
Quantity
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
BVCES
TJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 1 mA
Collector Cut-Off Current
G-E Leakage Current
VCE = 1500, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
VFM Diode Forward Voltage
IC = 30mA, VCE = VGE
IC = 30A, VGE = 15V
TC = 25oC
IC = 30A, VGE = 15V,
TC = 125oC
IC = 30A, VGE = 15V,
TC = 175oC
IF = 30A, TC = 25oC
IF = 30A, TC = 175oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characcteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 600V, IC = 30A,
RG = 10, VGE = 15V,
Resistive Load, TC = 25oC
VCC = 600V, IC = 30A,
RG = 10, VGE = 15V,
Resistive Load, TC = 175oC
VCE = 600V, IC = 30A,
VGE = 15V
1500
-
-
V
- 1.5 - V/oC
- - 1 mA
-
-
±500
nA
4.5 6.0 7.5
- 1.85 2.4
- 2.06 -
- 2.15 -
- 1.61 2.2
- 1.96 -
V
V
V
V
V
V
- 3310 -
- 70 -
- 55 -
pF
pF
pF
- 32 -
- 292 -
- 492 -
- 214 -
- 1.16 -
- 0.9 -
- 2.06 -
- 36 -
- 336 -
- 560 -
- 520 -
- 1.39 -
- 1.86 -
- 3.25 -
- 369 -
- 23.5 -
- 199 -
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
nC
nC
nC
©2015 Fairchild Semiconductor Corporation
FGH30S150P Rev. 1.1
2
www.fairchildsemi.com


Features FGH30S150P — 1500 V, 30 A Shorted-anod e IGBT March 2016 FGH30S150P 1500 V, 30 A Shorted-anode IGBT Features • H igh Speed Switching • Low Saturation Voltage: VCE(sat) = 1.85 V @ IC = 30 A • High Input Impedance • RoHS Compl iant Applications • Induction Heating , Microwave Oven General Description U sing advanced field stop trench and sho rted-anode technology, Fairchild’s sh orted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The de vice can operate in parallel configurat ion with exceptional avalanche capabili ty. This device is designed for inducti on heating and microwave oven. E C G COLLECTOR (FLANGE) Absolute Maximum Ra tings TC = 25°C unless otherwise noted Symbol Description VCES VGES IC ICM (1) Collector to Emitter Voltage Gate to Emitter Voltage Collector Current C ollector Current Pulsed Collector Curre nt @ TC = 25oC @ TC = 100oC IF Diode Continuous Forward Current @ TC = 25oC IF Diode Continuous Forward Current.
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