G30M65DF2 IGBT Datasheet

G30M65DF2 Datasheet PDF, Equivalent


Part Number

G30M65DF2

Description

Trench gate field-stop IGBT

Manufacture

STMicroelectronics

Total Page 16 Pages
Datasheet
Download G30M65DF2 Datasheet


G30M65DF2
STGP30M65DF2
Trench gate field-stop IGBT, M series 650 V, 30 A
low-loss in a TO-220 package
Datasheet - production data
TAB
TO-220
1 23
Figure 1: Internal schematic diagram
Features
6 µs of minimum short-circuit withstand time
VCE(sat) = 1.55 V (typ.) @ IC = 30 A
Tight parameters distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Applications
Motor control
UPS
PFC
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series of
IGBTs, which represent an optimum compromise
in performance to maximize the efficiency of
inverter systems where low-loss and short-circuit
capability are essential. Furthermore, a positive
VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Order code
STGP30M65DF2
Table 1: Device summary
Marking
Package
G30M65DF2
TO-220
Packaging
Tube
April 2017
DocID027355 Rev 3
This is information on a product in full production.
1/16
www.st.com

G30M65DF2
Contents
Contents
STGP30M65DF2
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 6
3 Test circuits ................................................................................... 11
4 Package information ..................................................................... 12
4.1 TO-220 type A package information................................................ 13
5 Revision history ............................................................................ 15
2/16 DocID027355 Rev 3


Features STGP30M65DF2 Trench gate field-stop IGB T, M series 650 V, 30 A low-loss in a T O-220 package Datasheet - production da ta TAB TO-220 1 23 Figure 1: Intern al schematic diagram Features  6 µ s of minimum short-circuit withstand ti me  VCE(sat) = 1.55 V (typ.) @ IC = 30 A  Tight parameters distribution  Safer paralleling  Low thermal r esistance  Soft and very fast recove ry antiparallel diode Applications  Motor control  UPS  PFC Descripti on This device is an IGBT developed usi ng an advanced proprietary trench gate field-stop structure. The device is par t of the M series of IGBTs, which repre sent an optimum compromise in performan ce to maximize the efficiency of invert er systems where low-loss and short-cir cuit capability are essential. Furtherm ore, a positive VCE(sat) temperature co efficient and tight parameter distribut ion result in safer paralleling operati on. Order code STGP30M65DF2 Table 1: Device summary Marking Package G30M65DF2 TO-220 Packaging Tube April 2017 D.
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