field-stop IGBT. G30M65DF2 Datasheet

G30M65DF2 IGBT. Datasheet pdf. Equivalent


STMicroelectronics G30M65DF2
STGP30M65DF2
Trench gate field-stop IGBT, M series 650 V, 30 A
low-loss in a TO-220 package
Datasheet - production data
TAB
TO-220
1 23
Figure 1: Internal schematic diagram
Features
6 µs of minimum short-circuit withstand time
VCE(sat) = 1.55 V (typ.) @ IC = 30 A
Tight parameters distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Applications
Motor control
UPS
PFC
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series of
IGBTs, which represent an optimum compromise
in performance to maximize the efficiency of
inverter systems where low-loss and short-circuit
capability are essential. Furthermore, a positive
VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Order code
STGP30M65DF2
Table 1: Device summary
Marking
Package
G30M65DF2
TO-220
Packaging
Tube
April 2017
DocID027355 Rev 3
This is information on a product in full production.
1/16
www.st.com


G30M65DF2 Datasheet
Recommendation G30M65DF2 Datasheet
Part G30M65DF2
Description Trench gate field-stop IGBT
Feature G30M65DF2; STGP30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220 package Datashe.
Manufacture STMicroelectronics
Datasheet
Download G30M65DF2 Datasheet




STMicroelectronics G30M65DF2
Contents
Contents
STGP30M65DF2
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 6
3 Test circuits ................................................................................... 11
4 Package information ..................................................................... 12
4.1 TO-220 type A package information................................................ 13
5 Revision history ............................................................................ 15
2/16 DocID027355 Rev 3



STMicroelectronics G30M65DF2
STGP30M65DF2
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
VCES
IC
IC
ICP(1)
VGE
IF
IF
IFP(1)
PTOT
TSTG
TJ
Collector-emitter voltage (VGE = 0 V)
Continuous collector current at TC = 25 °C
Continuous collector current at TC = 100 °C
Pulsed collector current
Gate-emitter voltage
Continuous forward current at TC = 25 °C
Continuous forward current at TC = 100 °C
Pulsed forward current
Total dissipation at TC = 25 °C
Storage temperature range
Operating junction temperature range
Notes:
(1)Pulse width limited by maximum junction temperature.
Symbol
RthJC
RthJC
RthJA
Table 3: Thermal data
Parameter
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
Electrical ratings
Value
650
60
30
120
±20
60
30
120
258
-55 to 150
-55 to 175
Unit
V
A
A
A
V
A
A
A
W
°C
°C
Value
0.58
1.47
62.5
Unit
°C/W
°C/W
°C/W
DocID027355 Rev 3
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