SCT2280KE MOSFET Datasheet

SCT2280KE Datasheet PDF, Equivalent


Part Number

SCT2280KE

Description

N-channel SiC power MOSFET

Manufacture

ROHM

Total Page 14 Pages
Datasheet
Download SCT2280KE Datasheet


SCT2280KE
SCT2280KE
N-channel SiC power MOSFET
Datasheet
VDSS
RDS(on) (Typ.)
ID
PD
1200V
280m
14A
108W
Features
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
6) Pb-free lead plating ; RoHS compliant
Application
• Solar inverters
• DC/DC converters
• Switch mode power supplies
• Induction heating
• Motor drives
Outline
TO-247
Inner circuit
(1) (2) (3)
(2)
(1) Gate
(2) Drain
*1 (3) Source
(1)
*1 Body Diode
(3)
Packaging specifications
Packaging
Tube
Reel size (mm)
-
Tape width (mm)
Type
Basic ordering unit (pcs)
-
30
Packing code
C
Marking
SCT2280KE
Absolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C
Tc = 100°C
Pulsed drain current
Gate - Source voltage (DC)
Gate - Source surge voltage (Tsurge ˂ 300nsec)
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
VGSS-surge*3
PD
Tj
Tstg
Value
1200
14
10
35
6 to 22
10 to 26
108
175
55 to 175
Unit
V
A
A
A
V
V
W
°C
°C
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/12
2017.07 - Rev.D

SCT2280KE
SCT2280KE
Thermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
Datasheet
Symbol
RthJC
RthJA
Tsold
Values
Min. Typ. Max.
Unit
- 1.07 1.39 °C/W
- - 50 °C/W
- - 265 °C
Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
1200
-
-
Zero gate voltage
drain current
Gate - Source leakage current
Gate - Source leakage current
Gate threshold voltage
IDSS
IGSS
IGSS
VGS (th)
VDS = 1200V, VGS = 0V
Tj = 25°C
Tj = 150°C
VGS = 22V, VDS = 0V
VGS = 6V, VDS = 0V
VDS = VGS, ID = 1.4mA
-
-
-
-
1.6
1 10
2-
- 100
- 100
2.8 4.0
Unit
V
A
nA
nA
V
*1 Limited only by maximum temperature allowed.
*2 PW 10s, Duty cycle 1%
*3 Example of acceptable Vgs waveform
*4 Pulsed
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2/12
2017.07 - Rev.D


Features SCT2280KE N-channel SiC power MOSFET Da tasheet VDSS RDS(on) (Typ.) ID PD 120 0V 280m 14A 108W Features 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to par allel 5) Simple to drive 6) Pb-free lea d plating ; RoHS compliant Applicat ion • Solar inverters • DC/DC conve rters • Switch mode power supplies Induction heating • Motor drives Outline TO-247 Inner circuit (1) (2) (3) (2) (1) Gate (2) Drain *1 (3) Source (1) *1 Body Diode (3) Pack aging specifications Packaging Tube R eel size (mm) - Tape width (mm) Type Basic ordering unit (pcs) 30 Packing code C Marking SCT2280KE Absolut e maximum ratings (Ta = 25°C) Paramete r Drain - Source voltage Continuous d rain current Tc = 25°C Tc = 100°C P ulsed drain current Gate - Source volt age (DC) Gate - Source surge voltage (T surge ˂ 300nsec) Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature Symbol VDSS ID *1 ID *1 ID,pulse *2 VGSS VGSS-surge*3 PD Tj Tstg Va.
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