SCS105KG Diode Datasheet

SCS105KG Datasheet PDF, Equivalent


Part Number

SCS105KG

Description

SiC Schottky Barrier Diode

Manufacture

ROHM

Total Page 6 Pages
Datasheet
Download SCS105KG Datasheet


SCS105KG
SCS105KG
SiC Schottky Barrier Diode
VR 1200V
IF 5A
QC 20nC
lFeatures
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
lConstruction
Silicon carbide epitaxial planer type
lOutline
TO-220AC
Datasheet
(1)
lInner circuit
(2) (3)
(1)
(1) Cathode
(2) Cathode
(3) Anode
(2) (3)
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Tube
-
-
50
-
SCS105KG
lAbsolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Value
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current
Total power dissipation
Junction temperature
VRM 1200
VR 1200
IF 5*1
IFSM
21*2
97*3
IFRM
24*4
PD 83*5
Tj 175
Range of storage temperature
Tstg
-55 to +175
Thermal resistance, junction to case
Rth(j-c)
1.8
*1 Tc=148°C *2 PW=8.3ms sinusoidal,Tj=25°C
*3 PW=10ms square,Tj=25°C *4 Tc=100°C,Tj=150°C,Duty cycle=10% *5 Tc=25°C
Unit
V
V
A
A
A
A
W
°C
°C
°C/W
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/5
2012.09 - Rev.A

SCS105KG
SCS105KG
Data Sheet
lElectrical characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
DC blocking voltage
VDC IR =0.1mA
1200
-
-
Forward voltage
IF=5A,Tj=25°C
VF
IF=5A,Tj=175°C
- 1.5 1.75
- 2.0 -
Reverse current
VR=1200V,Tj=25°C
IR
VR=1200V,Tj=175°C
-
-
5 100
60 -
Total capacitance
VR=1V,f=1MHz
C
VR=800V,f=1MHz
- 325 -
- 25 -
Total capacitive charge
Qc VR=800V,di/dt=500A/ms - 20 -
Switching time
tc VR=800V,di/dt=500A/ms - 15 -
Unit
V
V
V
mA
mA
pF
pF
nC
ns
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/5
2012.09 - Rev.A


Features SCS105KG SiC Schottky Barrier Diode VR 1 200V IF 5A QC 20nC lFeatures 1) Shorter recovery time 2) Reduced temperature d ependence 3) High-speed switching possi ble lConstruction Silicon carbide epita xial planer type lOutline TO-220AC Da tasheet (1) lInner circuit (2) (3) (1 ) (1) Cathode (2) Cathode (3) Anode ( 2) (3) lPackaging specifications Packag ing Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Tube 50 - SCS105KG lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Reverse voltage (repeti tive peak) Reverse voltage (DC) Continu ous forward current Surge no repetitive forward current Repetitive peak forwar d current Total power dissipation Junct ion temperature VRM 1200 VR 1200 IF 5*1 IFSM 21*2 97*3 IFRM 24*4 PD 83 *5 Tj 175 Range of storage temperatur e Tstg -55 to +175 Thermal resistanc e, junction to case Rth(j-c) 1.8 *1 Tc=148°C *2 PW=8.3ms sinusoidal,Tj=25 C *3 PW=10ms square,Tj=25°C *4 Tc=100°C,Tj=150°C,Duty cycle=10% *.
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