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SCS110KG

SiC Schottky Barrier Diode

Description

SCS110KG SiC Schottky Barrier Diode VR 1200V IF 10A QC 34nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lConstruction Silicon carbide epitaxial planer type lOutline TO-220AC Datasheet (1) lInner circuit (2) (3) (1) (1) Cathode (2) Cathode (3) Anode (2) (3) lPackaging specifications Packaging Ree...

ROHM

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