SPHV12-01ETG-C Diode Datasheet

SPHV12-01ETG-C Datasheet PDF, Equivalent


Part Number

SPHV12-01ETG-C

Description

200W Discrete Bidirectional TVS Diode

Manufacture

Littelfuse

Total Page 6 Pages
Datasheet
Download SPHV12-01ETG-C Datasheet


SPHV12-01ETG-C
TVS Diode Array (SPA®Diodes)
General Purpose ESD Protection - SPHV-C Series
SPHV-C Series 200W Discrete Bidirectional TVS Diode
RoHS Pb GREEN
Pinout
1
2
Functional Block Diagram
1
2
Description
The Bidirectional SPHV-C series is designed for use in
portable applications, LED lighting modules, automotive
applications, and low speed I/Os. It will protect sensitive
equipment from damage due to electrostatic discharge
(ESD) and other overvoltage transients.
The SPHV-C series can safely absorb repetitive ESD
strikes above the maximum level of the IEC 61000-
4-2 international standard (Level 4,  ±8kV contact
discharge)  without performance degradation and safely
dissipate up to 8A (SPHV12-C) of induced surge current
(IEC 61000-4-5, 2nd
clamping voltages.
Edition
tP=8/20μs)
with
very
low
Features
• ESD, IEC 61000-4-2,
±30kV contact, ±30kV air
• EFT, IEC 61000-4-4, 40A
(5/50ns)
• Lightning, IEC 61000-
4-5 2nd edition, 8A
(tP=8/20μs, SPHV12-C)
• Low clamping voltage
• Low leakage current
• Small SOD882 packaging
helps save board space
• Lead-free and RoHS
compliant
• AEC-Q101
qualified(SOD882 ETG
series)
• Side exposed leadframe
helps to verify
solderability (SPHVxx-
KTG-C series)
Applications
• LED Lighting Modules
• Portable Instrumentation
• General Purpose I/O
• Mobile & Handhelds
• RS232 / RS485
• CAN and LIN Bus
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
Additional Information
Datasheet
Resources
Samples
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/24/19

SPHV12-01ETG-C
TVS Diode Array (SPA®Diodes)
General Purpose ESD Protection - SPHV-C Series
Absolute Maximum Ratings
Symbol
Parameter
Value
Ppk
TOP
TSTOR
Peak Pulse Power (tp=8/20μs)
Operating Temperature
Storage Temperature
200
-40 to 125
-55 to 150
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied.
Units
W
°C
°C
Thermal Information
Parameter
Storage Temperature Range
Maximum Junction Temperature
Maximum Lead Temperature (Soldering 20-40s)
Rating
-55 to 150
150
260
SPHV12-C Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
Reverse Standoff Voltage
Reverse Breakdown Voltage
Leakage Current
VRWM
VBR
ILEAK
Clamp Voltage1
VC
Dynamic Resistance2
Peak Pulse Current
RDYN
Ipp
ESD Withstand Voltage1
VESD
Diode Capacitance1
CD-GND
Note:
1. Parameter is guaranteed by design and/or device characterization.
2. Transmission Line Pulse (TLP) with 100ns width and 200ps rise time.
Test Conditions
IR≤1μA
IR=1mA
VR=12V
IPP=1A, tp=8/20µs, Fwd
IPP=8A, tP=8/20μs, Fwd
TLP, tp=100ns, I/O to GND
tp=8/20µs
IEC61000-4-2 (Contact Discharge)
IEC61000-4-2 (Air Discharge)
Reverse Bias=0V, f=1MHz
SPHV15-C Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
Reverse Standoff Voltage
Reverse Breakdown Voltage
Leakage Current
VRWM
VBR
ILEAK
Clamp Voltage1
VC
Dynamic Resistance2
Peak Pulse Current
RDYN
Ipp
ESD Withstand Voltage1
VESD
Diode Capacitance1
CI/O-GND
Note:
1. Parameter is guaranteed by design and/or device characterization.
2. Transmission Line Pulse (TLP) with 100ns width and 200ps rise time.
Test Conditions
IR≤1μA
IR=1mA
VR=15V
IPP=1A, tp=8/20µs, Fwd
IPP=5A, tp=8/20µs, Fwd
TLP, tp=100ns, I/O to GND
tp=8/20µs
IEC61000-4-2 (Contact Discharge)
IEC61000-4-2 (Air Discharge)
Reverse Bias=0V, f=1MHz
Units
°C
°C
°C
Min
Typ
Max
Units
12.0 V
13.3 V
1.0 μA
19.0 V
25.0
V
0.48
8.0 A
±30 kV
±30 kV
30 pF
Min
Typ
Max
Units
15.0 V
16.7 V
1.0 μA
22.0
V
30.0
V
0.43
5.0 A
±30 kV
±30 kV
24 pF
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/24/19


Features TVS Diode Array (SPA®Diodes) General Pu rpose ESD Protection - SPHV-C Series SP HV-C Series 200W Discrete Bidirectional TVS Diode RoHS Pb GREEN Pinout 1 2 Functional Block Diagram 1 2 Descrip tion The Bidirectional SPHV-C series is designed for use in portable applicati ons, LED lighting modules, automotive a pplications, and low speed I/Os. It wil l protect sensitive equipment from dama ge due to electrostatic discharge (ESD) and other overvoltage transients. The SPHV-C series can safely absorb repeti tive ESD strikes above the maximum lev el of the IEC 61000- 4-2 international standard (Level 4,  ±8kV contact di scharge)  without performance degradat ion and safely dissipate up to 8A (SPH V12-C) of induced surge current (IEC 6 1000-4-5, 2nd clamping voltages. Editi on tP=8/20μs) with very low Featu res • ESD, IEC 61000-4-2, ±30kV cont act, ±30kV air • EFT, IEC 61000-4-4, 40A (5/50ns) • Lightning, IEC 610004 -5 2nd edition, 8A (tP=8/20μs, SPHV12-C) • Low clamping voltage • Low leakag.
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