SiR688DP MOSFET Datasheet

SiR688DP Datasheet PDF, Equivalent


Part Number

SiR688DP

Description

N-Channel 60V (D-S) MOSFET

Manufacture

Vishay

Total Page 13 Pages
Datasheet
Download SiR688DP Datasheet


SiR688DP
N-Channel 60 V (D-S) MOSFET
SiR688DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
60
RDS(on) () Max.
0.0035 at VGS = 10 V
0.0045 at VGS = 6 V
0.0060 at VGS = 4.5 V
ID (A)a
60
60
60
Qg (Typ.)
20.5 nC
PowerPAK® SO-8
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3
G
4
Bottom View
Ordering Information:
SiR688DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Low Qg for High Efficiency
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
Primary Side Switch
• Synchronous Rectifier
• DC/DC Converter
• DC/AC Inverters
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
VDS
VGS
ID
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TA = 70 °C
TC = 25 °C
TA = 25 °C
L =0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
60
± 20
60a
60a
29.2b, c
23.2b, c
100
60a
4.9b, c
30
45
83
53
5.4b, c
3.4b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
18
1
23
°C/W
1.5
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
Document Number: 63263
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S13-0790-Rev. A, 15-Apr-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiR688DP
SiR688DP
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
VDS
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 6 V, ID = 15 A
VGS = 4.5 V, ID = 10 A
VDS = 15 V, ID = 20 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
Coss
Crss
Qg
VDS = 30 V, VGS = 0 V, f = 1 MHz
VDS = 30 V, VGS = 10 V, ID = 10 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
IS
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = 30 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
VDD = 30 V, RL = 3
ID 10 A, VGEN = 10 V, Rg = 1
VDD = 30 V, RL = 3
ID 10 A, VGEN = 4.5 V, Rg = 1
TC = 25 °C
IS = 5 A
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
Typ.
Max.
Unit
60 V
- 6 mV/°C
1.3 2.7 V
± 100
nA
1
µA
10
30 A
0.0029 0.0035
0.0035 0.0045
0.0043 0.0060
70 S
3105
1345
95
44 66
20.5 31
8.6
4.7
0.4 2.2 4.4
15 30
8 16
31 60
8 16
43 85
120 220
32 60
9 18
pF
nC
ns
0.74
43
37
17
26
60
100
1.1
86
74
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 63263
2 S13-0790-Rev. A, 15-Apr-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Features N-Channel 60 V (D-S) MOSFET SiR688DP Vi shay Siliconix PRODUCT SUMMARY VDS (V ) 60 RDS(on) () Max. 0.0035 at VGS = 10 V 0.0045 at VGS = 6 V 0.0060 at VG S = 4.5 V ID (A)a 60 60 60 Qg (Typ.) 20.5 nC PowerPAK® SO-8 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3 G 4 Bottom View Ordering Information: SiR6 88DP-T1-GE3 (Lead (Pb)-free and Halogen -free) FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Low Qg for High Efficiency • Material categorization: For definitions of com pliance please see www.vishay.com/doc?9 9912 APPLICATIONS • Primary Side Swi tch • Synchronous Rectifier • DC/DC Converter • DC/AC Inverters D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATI NGS (TA = 25 °C, unless otherwise note d) Parameter Symbol Drain-Source Vol tage Gate-Source Voltage Continuous Dra in Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C VDS VGS ID Pu lsed Drain Current (t = 300 µs) Contin uous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Ene.
Keywords SiR688DP, datasheet, pdf, Vishay, N-Channel, 60V, D-S, MOSFET, iR688DP, R688DP, 688DP, SiR688D, SiR688, SiR68, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)