Si3476DV MOSFET Datasheet

Si3476DV Datasheet PDF, Equivalent


Part Number

Si3476DV

Description

N-Channel 80V (D-S) MOSFET

Manufacture

Vishay

Total Page 11 Pages
Datasheet
Download Si3476DV Datasheet


Si3476DV
N-Channel 80 V (D-S) MOSFET
Si3476DV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
80
RDS(on) () Max.
0.093 at VGS = 10 V
0.108 at VGS = 6 V
0.126 at VGS = 4.5 V
ID (A)a
4.6
4.3
4
Qg (Typ.)
2.6
TSOP-6
Top View
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load Switch for Portable Applications
• LED Backlight Switch
• DC/DC Converter
• Boost Converter
D
(1, 2, 5, 6)
D
3 mm D
G
16
25
34
2.85 mm
D
D
S
Marking Code
BG XX
Lot Traceability
and Date Code
Part # Code
G
(3)
(4)
S
N-Channel MOSFET
Ordering Information: Si3476DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 100 µs)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
80
± 20
4.6
3.7
3.5b,c
2.8b,c
18
3
1.7b,c
3.6
2.3
2b,c
1.3b,c
- 55 to 150
Unit
V
A
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb,d
Maximum Junction-to-Foot (Drain)
t 5 s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 110 °C/W.
Symbol
RthJA
RthJF
Typical
50
28
Maximum
62.5
35
Unit
°C/W
Document Number: 62884
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S13-1818-Rev. A, 12-Aug-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Si3476DV
Si3476DV
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VDS/TJ
VGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 80 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 85 °C
On-State Drain Currenta
ID(on)
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 3.5 A
Drain-Source On-State Resistancea
RDS(on)
VGS = 6 V, ID = 3.2 A
VGS = 4.5 V, ID = 3 A
Forward Transconductance
gfs VDS = 15 V, ID = 3.5 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 40 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 40 V, VGS = 10 V, ID = 3.5 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off DelayTime
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off DelayTime
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
IS
Pulse Diode Forward Current (t = 100 µs)
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Charge
Qrr
Body Diode Reverse Recovery Time
trr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = 40 V, VGS = 4.5 V, ID = 3.5 A
f = 1 MHz
VDD = 40 V, RL = 14.3
ID 2.8 A, VGEN = 10 V, Rg = 1
VDD = 40 V, RL = 14.3
ID 2.8 A, VGEN = 4.5 V, Rg = 1
TC = 25 °C
IS = 2.8 A
IF = 2.8 A, dI/dt = 100 A/µs
Min.
Typ.
Max.
Unit
80 V
36
- 4.8
mV/°C
1.2 3 V
± 100
nA
1
µA
10
10 A
0.077 0.093
0.090 0.108
0.105 0.126
7S
195
116
16
4.9
2.6
0.8
1.3
0.82 4.2
8
4
14
3
26
50
12
15
0.85
13
20
10.5
9.5
7.5
5
8.2
16
8
21
6
40
75
20
23
3
18
1.2
20
30
pF
nC
ns
A
V
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 62884
2 S13-1818-Rev. A, 12-Aug-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Features N-Channel 80 V (D-S) MOSFET Si3476DV Vi shay Siliconix PRODUCT SUMMARY VDS (V ) 80 RDS(on) () Max. 0.093 at VGS = 10 V 0.108 at VGS = 6 V 0.126 at VGS = 4.5 V ID (A)a 4.6 4.3 4 Qg (Typ.) 2. 6 TSOP-6 Top View FEATURES • Trench FET® Power MOSFET • 100 % Rg Tested • Material categorization: For defini tions of compliance please see www.vish ay.com/doc?99912 APPLICATIONS • Load Switch for Portable Applications • LE D Backlight Switch • DC/DC Converter • Boost Converter D (1, 2, 5, 6) D 3 mm D G 16 25 34 2.85 mm D D S Marki ng Code YY BG XX Lot Traceability an d Date Code Part # Code G (3) (4) S N -Channel MOSFET Ordering Information: Si3476DV-T1-GE3 (Lead (Pb)-free and Hal ogen-free) ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted) Pa rameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current (t = 100 µs) IDM Continuous Source-Drain Diode Curren.
Keywords Si3476DV, datasheet, pdf, Vishay, N-Channel, 80V, D-S, MOSFET, i3476DV, 3476DV, 476DV, Si3476D, Si3476, Si347, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)