SUP70060E MOSFET Datasheet

SUP70060E Datasheet PDF, Equivalent


Part Number

SUP70060E

Description

N-Channel 100V (D-S) MOSFET

Manufacture

Vishay

Total Page 8 Pages
PDF Download
Download SUP70060E Datasheet PDF


SUP70060E
www.vishay.com
SUP70060E
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () MAX.
0.0058 at VGS = 10 V
100
0.0064 at VGS = 7.5 V
TO-220AB
ID (A)
131
129
Qg (TYP.)
53.5 nC
Top View
S
D
G
Ordering Information:
SUP70060E-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• ThunderFET® power MOSFET
• Maximum 175 °C junction temperature
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
D
• Power supplies:
- Uninterruptible power supplies
- AC/DC switch-mode power supplies
- Lighting
• Synchronous rectification
G
• DC/DC converter
• Motor drive switch
• DC/AC inverter
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 100 μs)
Avalanche Current
Single Avalanche Energy a
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
100
± 20
131
75
240
50
125
200 b
66.6 b
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient (PCB Mount) c
Junction-to-Case (Drain)
Notes
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR4 material).
SYMBOL
RthJA
RthJC
LIMIT
40
0.75
UNIT
°C/W
S16-0244-Rev. A, 15-Feb-16
1
Document Number: 65382
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SUP70060E
www.vishay.com
SUP70060E
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance a
Dynamic b
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 20 V
VDS = 100 V, VGS = 0 V
VDS = 100 V, VGS = 0 V, TJ = 125 °C
VDS = 100 V, VGS = 0 V, TJ = 175 °C
VDS 10 V, VGS = 10 V
VGS = 10 V, ID = 30 A
VGS = 7.5 V, ID = 30 A
VDS = 15 V, ID = 30 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = 50 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Qg
Gate-Source Charge c
Qgs VDS = 50 V, VGS = 10 V, ID = 30 A
Gate-Drain Charge c
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time c
td(on)
Rise Time c
Turn-Off Delay Time c
tr
td(off)
VDD = 50 V, RL = 1.67
ID 30 A, VGEN = 10 V, Rg = 1
Fall Time c
tf
Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C)
Pulsed Current (t = 100 μs)
ISM
Forward Voltage a
VSD IF = 30 A, VGS = 0 V
Reverse Recovery Time
trr
Peak Reverse Recovery Charge
IRM(REC)
IF = 30 A, di/dt = 100 A/μs
Reverse Recovery Charge
Qrr
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
MIN.
TYP.
MAX.
UNIT
100 -
-
V
2-4
-
-
± 100
nA
- -1
μA
- - 100
- - 2 mA
90 - - A
- 0.0048 0.0058
- 0.0050 0.0064
- 85 -
S
- 3330 -
- 1395 -
- 95 -
- 53.5 81
- 14.5 -
- 13.2 -
0.9 1.9 3.8
- 13 26
- 22 44
- 27 54
- 9 18
pF
nC
ns
- - 240 A
- 0.86 1.4 V
- 88 176 ns
- 5 10 A
-
0.22 0.44
μC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-0244-Rev. A, 15-Feb-16
2
Document Number: 65382
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Features www.vishay.com SUP70060E Vishay Silicon ix N-Channel 100 V (D-S) MOSFET PRODU CT SUMMARY VDS (V) RDS(on) () MAX. 0.0058 at VGS = 10 V 100 0.0064 at VG S = 7.5 V TO-220AB ID (A) 131 129 Qg (TYP.) 53.5 nC Top View S D G Order ing Information: SUP70060E-GE3 (lead (Pb)-free and halogen-free) FEATURES • ThunderFET® power MOSFET • Maxim um 175 °C junction temperature • 100 % Rg and UIS tested • Material categ orization: for definitions of compli ance please see www.vishay.com/doc?9991 2 APPLICATIONS D • Power supplies:  - Uninterruptible power supplies - AC/DC switch-mode power supplies - Lighting • Synchronous rectific ation G • DC/DC converter • Moto r drive switch • DC/AC inverter S N -Channel MOSFET ABSOLUTE MAXIMUM RATIN GS (TC = 25 °C, unless otherwise noted ) PARAMETER SYMBOL Drain-Source Volt age Gate-Source Voltage Continuous Drai n Current (TJ = 150 °C) Pulsed Drain C urrent (t = 100 μs) Avalanche Current Single Avalanche Energy a Maximum Power Dissipation a Opera.
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