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ESDL1531 Diodes Datasheet |
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| Part Number | ESDL1531 |
| Description | 3.3V ESD Protection Diodes |
| Manufacture | ON Semiconductor |
| Total Page | 7 Pages |
| PDF Download |
ESDL1531
3.3V ESD Protection Diodes
Ultra Low Capacitance ESD Protection
Diode for High Speed Data Line
The ESDL1531 ESD protection diodes are designed to protect high
speed data lines from ESD. Ultra−low capacitance and low ESD
clamping voltage make this device an ideal solution for protecting
voltage sensitive high speed data lines.
Features
• Low Capacitance (0.15 pF Typ, I/O to GND)
• Protection for the Following IEC Standards:
IEC 61000−4−2 (Level 4)
• Low ESD Clamping Voltage
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• USB 2.0/3.x
• Thunderbolt
• MHL 2.0
• eSATA
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Operating Junction Temperature Range TJ −55 to +150 °C
Storage Temperature Range
Tstg − 55 to +150 °C
Lead Solder Temperature −
Maximum (10 Seconds)
TL 260 °C
IEC 61000−4−2 Contact
IEC 61000−4−2 Air
ESD
±30 kV
±30 kV
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
See Application Note AND8308/D for further description of
survivability specs.
www.onsemi.com
MARKING
DIAGRAM
ESDL1531
X4DFN2 (01005)
CASE 718AA
JM
J = Device Code
M = Date Code
PIN CONFIGURATION
AND SCHEMATIC
12
=
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2016
May, 2019 − Rev. 0
1
Publication Order Number:
ESDL1531/D
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ESDL1531
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
VRWM
IR
VBR
IT
VHOLD
IHOLD
RDYN
IPP
VC
Working Peak Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Holding Reverse Voltage
Holding Reverse Current
Dynamic Resistance
Maximum Peak Pulse Current
Clamping Voltage @ IPP
VC = VHOLD + (IPP * RDYN)
I
IPP
RDYN
IHOLD
VBR VCVRWMVHOLD
IT
IR
IR
IT
VHOLDVRWMVC
IHOLD
V
VBR
RDYN
−IPP
VC = VHOLD + (IPP * RDYN)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse Working Voltage
VRWM I/O Pin to GND
3.3 V
Breakdown Voltage
VBR IT = 1 mA, I/O Pin to GND
5.5 8.6 V
Reverse Leakage Current
IR VRWM = 3.3 V, I/O Pin to GND
1.0 mA
Reverse Holding Voltage
VHOLD I/O Pin to GND
2.1 V
Holding Reverse Current
IHOLD I/O Pin to GND
17 mA
Clamping Voltage
TLP (Note 1)
VC IPP = 8 A IEC 61000−4−2 Level 2 equivalent
(±4 kV Contact, ±4 kV Air)
6.5
V
IPP = 16 A
IEC 61000−4−2 Level 2 equivalent
(±8 kV Contact, ±15 kV Air)
10.2
Reverse Peak Pulse Cur-
rent
IPP IEC61000−4−5 (8/20 ms)
5.7 7.5
A
Clamping Voltage (8/20 ms) VC IPP = 5.7 A
5.6 6.5 V
Dynamic Resistance
RDYN I/O Pin to GND
0.46 W
Junction Capacitance
CJ VR = 0 V, f = 1 MHz
0.15 0.3 pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 1 ns, averaging window; t1 = 70 ns to t2 = 90 ns.
www.onsemi.com
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| Features | ESDL1531 3.3V ESD Protection Diodes Ult ra Low Capacitance ESD Protection Diode for High Speed Data Line The ESDL1531 ESD protection diodes are designed to p rotect high speed data lines from ESD. Ultra−low capacitance and low ESD cla mping voltage make this device an ideal solution for protecting voltage sensit ive high speed data lines. Features • Low Capacitance (0.15 pF Typ, I/O to G ND) • Protection for the Following IE C Standards: IEC 61000−4−2 (Level 4 ) • Low ESD Clamping Voltage • Thes e Devices are Pb−Free, Halogen Free/B FR Free and are RoHS Compliant Typical Applications • USB 2.0/3.x • Thunde rbolt • MHL 2.0 • eSATA MAXIMUM RA TINGS (TJ = 25°C unless otherwise note d) Rating Symbol Value Unit Operat ing Junction Temperature Range TJ −55 to +150 °C Storage Temperature Range Tstg − 55 to +150 °C Lead Solder Temperature − Maximum (10 Seconds) T L 260 °C IEC 61000−4−2 Contact IE C 61000−4−2 Air ESD ±30 kV ±30 kV Stresses exceeding those listed in the Maximum Ratings table may. |
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