SiHW70N60EF MOSFET Datasheet

SiHW70N60EF Datasheet PDF, Equivalent


Part Number

SiHW70N60EF

Description

Power MOSFET

Manufacture

Vishay

Total Page 8 Pages
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SiHW70N60EF
www.vishay.com
SiHW70N60EF
Vishay Siliconix
EF Series Power MOSFET with Fast Body Diode
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) typ. at 25 °C ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
650
VGS = 10 V
380
62
102
Single
TO-247AD
0.033
D
G
D
S
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
FEATURES
• Fast body diode MOSFET using E series
technology
• Reduced trr, Qrr, and IRRM
• Low figure-of-merit (FOM): Ron x Qg
• Low input capacitance (Ciss)
• Increased robustness due to low Qrr
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Telecommunications
- Server and telecom power supplies
• Lighting
- High intensity discharge (HID)
- Light emitting diodes (LEDs)
• Consumer and computing
- ATX power supplies
• Industrial
- Welding
- Battery chargers
• Renewable energy
- Solar (PV inverters)
• Switch mode power suppliers (SMPS)
• Applications using the following topologies
- LLC
- Phase shifted bridge (ZVS)
- 3-level inverter
- AC/DC bridge
TO-247AD
SiHW70N60EF-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current a
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energy b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt d
TJ = 125 °C
EAS
PD
TJ, Tstg
dV/dt
Soldering Recommendations (Peak Temperature) c
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 11 A
c. 1.6 mm from case
d. ISD = 35 A, dI/dt = 750 A/μs, VDS = 400 V
LIMIT
600
± 30
70
45
229
4.2
1706
520
-55 to +150
70
50
300
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
S17-0297-Rev. B, 27-Feb-17
1
Document Number: 91599
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiHW70N60EF
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SYMBOL
RthJA
RthJC
TYP.
-
-
SiHW70N60EF
Vishay Siliconix
MAX.
40
0.24
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VGS = ± 30 V
VDS = 480 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 35 A
VDS = 30 V, ID = 35 A
600
-
2.0
-
-
-
-
-
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective output capacitance, energy
related a
Effective output capacitance, time
related b
Ciss
Coss
Crss
Co(er)
Co(tr)
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
VGS = 0 V, VDS = 0 V to 480 V
-
-
-
-
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VGS = 10 V
ID = 35 A, VDS = 480 V
VDD = 480 V, ID = 35 A
Rg = 9.1 , VGS = 10 V
f = 1 MHz, open drain
-
-
-
-
-
-
-
0.5
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Current
integral reverse
ISM p - n junction diode
D
G
S
-
-
Diode Forward Voltage
VSD
TJ = 25 °C, IS = 35 A, VGS = 0 V
-
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
trr
Qrr
IRRM
TJ = 25 °C, IF = IS = 35 A,
dI/dt = 100 A/μs, VR = 400 V
-
-
-
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS
b. Coss(tr) is a fixed capacitance that gives the charging time as Coss while VDS is rising from 0 % to 80 % VDS
TYP. MAX. UNIT
-
0.69
-
-
-
-
-
0.033
25
-
-
4.0
± 100
±1
1
2
0.038
-
V
V/°C
V
nA
μA
μA
mA
S
7500
378
5
263
926
253
62
102
56
107
257
123
1.1
-
-
-
-
-
380
-
-
84
161
386
185
2.2
pF
nC
ns
- 70
A
- 229
0.9 1.2
V
213 426 ns
1.6 3.2 μC
16 - A
S17-0297-Rev. B, 27-Feb-17
2
Document Number: 91599
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Features www.vishay.com SiHW70N60EF Vishay Silic onix EF Series Power MOSFET with Fast Body Diode PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. at 25 °C () Q g (Max.) (nC) Qgs (nC) Qgd (nC) Configu ration 650 VGS = 10 V 380 62 102 Singl e TO-247AD 0.033 D G D S G S N-Chan nel MOSFET ORDERING INFORMATION Packag e Lead (Pb)-free and Halogen-free FEAT URES • Fast body diode MOSFET using E series technology • Reduced trr, Qrr , and IRRM • Low figure-of-merit (FOM ): Ron x Qg • Low input capacitance ( Ciss) • Increased robustness due to l ow Qrr • Ultra low gate charge (Qg) Avalanche energy rated (UIS) • Mat erial categorization: for definitions o f compliance please see www.vishay.com/ doc?99912 APPLICATIONS • Telecommunic ations - Server and telecom power suppl ies • Lighting - High intensity disch arge (HID) - Light emitting diodes (LED s) • Consumer and computing - ATX pow er supplies • Industrial - Welding - Battery chargers • Renewable energy - Solar (PV inverters) • Switch mode power suppliers (.
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