CSD19531KCS MOSFET Datasheet

CSD19531KCS Datasheet PDF, Equivalent


Part Number

CSD19531KCS

Description

100V N-Channel Power MOSFET

Manufacture

etcTI

Total Page 10 Pages
Datasheet
Download CSD19531KCS Datasheet


CSD19531KCS
Product
Folder
Order
Now
Technical
Documents
Tools &
Software
Support &
Community
CSD19531KCS
SLPS407C – SEPTEMBER 2013 – REVISED MARCH 2017
CSD19531KCS 100-V N-Channel NexFET™ Power MOSFET
1 Features
1 Ultra-Low Qg and Qgd
• Low-Thermal Resistance
• Avalanche Rated
• Lead-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• TO-220 Plastic Package
2 Applications
• Secondary Side Synchronous Rectifier
• Hot Swap Telecom
• Motor Control
Product Summary
TA = 25°C
VDS Drain-to-Source Voltage
Qg Gate Charge Total (10 V)
Qgd Gate Charge Gate-to-Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
100
37
7.5
VGS = 6 V
VGS = 10 V
2.7
7.3
6.4
UNIT
V
nC
nC
m
V
DEVICE
CSD19531KCS
Device Information(1)
PACKAGE
MEDIA
TO-220 Plastic Package Tube
QTY
50
SHIP
Tube
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
3 Description
This 100-V, 6.4-mΩ, TO-220 NexFET™ power
MOSFET is designed to minimize losses in power
conversion applications.
.
Drain (Pin 2)
Gate
(Pin 1)
.
Source (Pin 3)
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current (Package Limited)
VALUE
100
±20
100
UNIT
V
V
Continuous Drain Current (Silicon Limited),
ID TC = 25°C
Continuous Drain Current (Silicon Limited),
TC = 100°C
IDM Pulsed Drain Current(1)
PD Power Dissipation
TJ, Operating Junction,
Tstg Storage Temperature
EAS
Avalanche Energy, Single Pulse
ID = 60 A, L = 0.1 mH, RG = 25
110
78
285
214
–55 to 175
A
A
W
°C
180 mJ
(1) Max RθJC = 0.7º C/W, pulse duration 100 μs, duty cycle
1%.
RDS(on) vs VGS
20
18
TC = 25°C,I D = 60A
TC = 125°C,I D = 60A
16
14
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to- Source Voltage (V)
G001
Gate Charge
10
9
ID = 60A
VDS = 50V
8
7
6
5
4
3
2
1
0
0 4 8 12 16 20 24 28 32 36 40
Qg - Gate Charge (nC)
G001
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.

CSD19531KCS
CSD19531KCS
SLPS407C – SEPTEMBER 2013 – REVISED MARCH 2017
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6 Device and Documentation Support.................... 7
6.1 Receiving Notification of Documentation Updates.... 7
6.2 Community Resources.............................................. 7
6.3 Trademarks ............................................................... 7
6.4 Electrostatic Discharge Caution ................................ 7
6.5 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 KCS Package Dimensions........................................ 8
4 Revision History
Changes from Revision B (June 2014) to Revision C
Page
• Added Receiving Notification of Documentation Updates section and Community Resources section to the Device
and Documentation Support section ...................................................................................................................................... 7
• Changed package drawing in KCS Package Dimensions section ......................................................................................... 8
Changes from Revision A (May 2014) to Revision B
Page
• Added value for max Qg ......................................................................................................................................................... 3
Changes from Original (September 2013) to Revision A
Page
• Updated the silicon limited currents to reflect increase in device operating temperature range ........................................... 1
• Increased pulsed current to reflect new conditions ............................................................................................................... 1
• Increased max power dissipation to reflect new conditions .................................................................................................. 1
• Increased operating and junction temperature range to 175ºC ............................................................................................. 1
• Updated the pulsed drain current conditions.......................................................................................................................... 1
• Changed Figure 1 from a normalized RθJA curve to a normalized RθJC curve ....................................................................... 4
• Updated Figure 6 to reflect increase in device operating temperature range ....................................................................... 5
• Updated Figure 8 to reflect increase in device operating temperature range ....................................................................... 5
• Updated Figure 10 to reflect measured SOA data ................................................................................................................ 6
• Updated Figure 12 to reflect increase in device operating temperature range ..................................................................... 6
2 Submit Documentation Feedback
Copyright © 2013–2017, Texas Instruments Incorporated
Product Folder Links: CSD19531KCS


Features Product Folder Order Now Technical Doc uments Tools & Software Support & Com munity CSD19531KCS SLPS407C – SEPTEM BER 2013 – REVISED MARCH 2017 CSD1953 1KCS 100-V N-Channel NexFET™ Power MO SFET 1 Features •1 Ultra-Low Qg and Qgd • Low-Thermal Resistance • Aval anche Rated • Lead-Free Terminal Plat ing • RoHS Compliant • Halogen Free • TO-220 Plastic Package 2 Applicati ons • Secondary Side Synchronous Rect ifier • Hot Swap Telecom • Motor Co ntrol Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Dr ain RDS(on) Drain-to-Source On Resistan ce VGS(th) Threshold Voltage TYPICAL V ALUE 100 37 7.5 VGS = 6 V VGS = 10 V 2.7 7.3 6.4 UNIT V nC nC mΩ V DE VICE CSD19531KCS Device Information(1) PACKAGE MEDIA TO-220 Plastic Packag e Tube QTY 50 SHIP Tube (1) For all available packages, see the orderable a ddendum at the end of the data sheet. 3 Description This 100-V, 6.4-mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses.
Keywords CSD19531KCS, datasheet, pdf, etcTI, 100V, N-Channel, Power, MOSFET, SD19531KCS, D19531KCS, 19531KCS, CSD19531KC, CSD19531K, CSD19531, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)