CSD19531Q5A MOSFET Datasheet

CSD19531Q5A Datasheet PDF, Equivalent


Part Number

CSD19531Q5A

Description

100V N-Channel Power MOSFET

Manufacture

etcTI

Total Page 14 Pages
Datasheet
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CSD19531Q5A
SLPS406B – SEPTEMBER 2013 – REVISED MAY 2014
CSD19531Q5A 100 V N-Channel NexFET™ Power MOSFETs
1 Features
1 Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5 mm × 6 mm Plastic Package
Product Summary
TA = 25°C
VDS Drain-to-Source Voltage
Qg Gate Charge Total (10 V)
Qgd Gate Charge Gate to Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
100
37
6.6
VGS = 6 V
VGS = 10 V
2.7
6.0
5.3
UNIT
V
nC
nC
m
m
V
2 Applications
• Primary Side Telecom
• Secondary Side Synchronous Rectifier
• Motor Control
3 Description
This 100 V, 5.3 mΩ, SON 5 mm × 6 mm NexFET™
power MOSFET is designed to minimize losses in
power conversion applications.
Top View
S1
8D
S2
7D
S3
6D
G4
D
5D
P0093-01
.
.
Device
CSD19531Q5A
CSD19531Q5AT
.
Ordering Information
Media
Qty Package
13-Inch Reel 2500 SON 5 x 6 mm
7-Inch Reel 250 Plastic Package
Ship
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current (Package limited)
VALUE
100
±20
100
UNIT
V
V
ID
Continuous Drain Current (Silicon limited),
TC = 25°C
Continuous Drain Current(1)
110
16
IDM Pulsed Drain Current(2)
Power Dissipation(1)
PD Power Dissipation, TC = 25°C
337
3.3
125
TJ, Operating Junction and
Tstg Storage Temperature Range
–55 to 150
EAS
Avalanche Energy, single pulse
ID = 60 A, L = 0.1 mH, RG = 25
180
A
A
W
°C
mJ
(1) Typical RθJA = 40°C/W on a 1-inch2, 2-oz. Cu pad on a 0.06-
inch thick FR4 PCB.
(2) Max RθJC = 1.0°C/W, pulse duration 100 μs, duty cycle 1%
RDS(on) vs VGS
20
18
TC = 25°C,I D = 16A
TC = 125°C,I D = 16A
16
14
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to- Source Voltage (V)
G001
Gate Charge
10
9
ID = 16A
VDS = 50V
8
7
6
5
4
3
2
1
0
048
12 16 20 24 28 32 36 40
Qg - Gate Charge (nC)
G001
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.

CSD19531Q5A
CSD19531Q5A
SLPS406B – SEPTEMBER 2013 – REVISED MAY 2014
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Characteristics ............................................ 3
5.3 Typical MOSFET Characteristics.............................. 4
6 Device and Documentation Support.................... 7
6.1 Trademarks ............................................................... 7
6.2 Electrostatic Discharge Caution ................................ 7
6.3 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 Q5A Package Dimensions ........................................ 9
7.2 Recommended PCB Pattern................................... 10
7.3 Recommended Stencil Opening ............................. 11
7.4 Q5A Tape and Reel Information ............................. 11
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (January 2014) to Revision B
Page
• Increased pulsed drain current to 337A ................................................................................................................................ 1
• Added line for max power dissipation with case temperature held to 25°C .......................................................................... 1
• Changed Figure 1 from a normalized RθJA curve to a normalized RθJC curve........................................................................ 4
• Updated the safe operating area in Figure 10 ....................................................................................................................... 6
Changes from Original (September 2013) to Revision A
Page
• Added more information to description................................................................................................................................... 1
• Added small reel order number .............................................................................................................................................. 1
• Removed TC = 25°C condition from continuous drain current (package limited) in Absolute Maximum Ratings table ......... 1
• Updated the pulsed drain current conditions ......................................................................................................................... 1
• Changed Typ RthJA = 99°C/W to RthJA = 100°C/W in Figure 1 ............................................................................................ 4
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Features Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD19531Q5A SLPS406B – SEP TEMBER 2013 – REVISED MAY 2014 CSD195 31Q5A 100 V N-Channel NexFET™ Power M OSFETs 1 Features •1 Ultra-Low Qg an d Qgd • Low Thermal Resistance • Av alanche Rated • Pb-Free Terminal Plat ing • RoHS Compliant • Halogen Free • SON 5 mm × 6 mm Plastic Package Product Summary TA = 25°C VDS Drain-t o-Source Voltage Qg Gate Charge Total ( 10 V) Qgd Gate Charge Gate to Drain RDS (on) Drain-to-Source On Resistance VGS( th) Threshold Voltage TYPICAL VALUE 1 00 37 6.6 VGS = 6 V VGS = 10 V 2.7 6.0 5.3 UNIT V nC nC mΩ mΩ V 2 Ap plications • Primary Side Telecom • Secondary Side Synchronous Rectifier Motor Control 3 Description This 100 V, 5.3 mΩ, SON 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize l osses in power conversion applications. Top View S1 8D S2 7D S3 6D G4 D 5D P0093-01 . . Device CSD19531Q5A CSD19531Q5AT . Ordering Information Media Qty Package .
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