CSD19533KCS MOSFET Datasheet

CSD19533KCS Datasheet PDF, Equivalent


Part Number

CSD19533KCS

Description

100V N-Channel Power MOSFET

Manufacture

etcTI

Total Page 10 Pages
Datasheet
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CSD19533KCS
SLPS482B – DECEMBER 2013 – REVISED JANUARY 2015
CSD19533KCS, 100 V N-Channel NexFET™ Power MOSFET
1 Features
1 Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• TO-220 Plastic Package
2 Applications
• Secondary Side Synchronous Rectifier
• Motor Control
3 Description
This 100 V, 8.7 mΩ, TO-220 NexFET™ power
MOSFET is designed to minimize losses in power
conversion applications.
Drain (Pin 2)
Gate
(Pin 1)
Source (Pin 3)
Product Summary
TA = 25°C
VDS Drain-to-Source Voltage
Qg Gate Charge Total (10 V)
Qgd Gate Charge Gate-to-Drain
RDS(on) Drain-to-Source On-Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
100
27
5.4
VGS = 6 V
VGS = 10 V
2.8
9.7
8.7
UNIT
V
nC
nC
m
m
V
Device
CSD19533KCS
Ordering Information(1)
Package
Media Qty
TO-220 Plastic
Package
Tube
50
Ship
Tube
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current (Package limited)
VALUE
100
±20
100
UNIT
V
V
Continuous Drain Current (Silicon limited),
ID TC = 25°C
86
Continuous Drain Current (Silicon limited),
TC = 100°C
IDM Pulsed Drain Current (1)
61
207
PD Power Dissipation
188
TJ, Operating Junction and
Tstg Storage Temperature Range
–55 to 175
EAS
Avalanche Energy, single pulse
ID = 46 A, L = 0.1 mH, RG = 25
106
A
A
W
°C
mJ
(1) Max RθJC = 0.8°C/W, pulse duration 100 μs, Duty cycle 1%
RDS(on) vs VGS
30
27
TC = 25°C,I D = 55A
TC = 125°C,I D = 55A
24
21
18
15
12
9
6
3
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to- Source Voltage (V)
G001
Gate Charge
10
9
ID = 55A
VDS = 50V
8
7
6
5
4
3
2
1
0
036
9 12 15 18 21 24 27 30
Qg - Gate Charge (nC)
G001
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.

CSD19533KCS
CSD19533KCS
SLPS482B – DECEMBER 2013 – REVISED JANUARY 2015
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics .............................. 4
6 Device and Documentation Support.................... 7
6.1 Trademarks ............................................................... 7
6.2 Electrostatic Discharge Caution ................................ 7
6.3 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 KCS Package Dimensions........................................ 8
4 Revision History
Changes from Revision A (July 2014) to Revision B
Page
• Changed Qrr to 211 nC .......................................................................................................................................................... 3
Changes from Original (December 2013) to Revision A
Page
• Pulsed drain current increased from 104 to 207 A ................................................................................................................ 1
• Updated pulsed current conditions ........................................................................................................................................ 1
• Updated Figure 10 to reflect increased pulsed drain current ................................................................................................. 6
2 Submit Documentation Feedback
Copyright © 2013–2015, Texas Instruments Incorporated
Product Folder Links: CSD19533KCS


Features Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD19533KCS SLPS482B – DEC EMBER 2013 – REVISED JANUARY 2015 CSD 19533KCS, 100 V N-Channel NexFET™ Pow er MOSFET 1 Features •1 Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal P lating • RoHS Compliant • Halogen F ree • TO-220 Plastic Package 2 Applic ations • Secondary Side Synchronous R ectifier • Motor Control 3 Descriptio n This 100 V, 8.7 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize l osses in power conversion applications. Drain (Pin 2) Gate (Pin 1) Source (P in 3) Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Dr ain RDS(on) Drain-to-Source On-Resistan ce VGS(th) Threshold Voltage TYPICAL V ALUE 100 27 5.4 VGS = 6 V VGS = 10 V 2.8 9.7 8.7 UNIT V nC nC mΩ mΩ V Device CSD19533KCS Ordering Informa tion(1) Package Media Qty TO-220 Plastic Package Tube 50 Ship Tube (1) For all available.
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