CSD19533Q5A MOSFET Datasheet

CSD19533Q5A Datasheet PDF, Equivalent


Part Number

CSD19533Q5A

Description

100V N-Channel Power MOSFET

Manufacture

etcTI

Total Page 14 Pages
Datasheet
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CSD19533Q5A
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CSD19533Q5A
SLPS486A – DECEMBER 2013 – REVISED MAY 2014
CSD19533Q5A 100 V N-Channel NexFET™ Power MOSFET
1 Features
1 Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package
Product Summary
TA = 25°C
VDS Drain-to-Source Voltage
Qg Gate Charge Total (10 V)
Qgd Gate Charge Gate to Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
100
27
4.9
VGS = 6 V
VGS = 10 V
2.8
8.7
7.8
UNIT
V
nC
nC
m
m
V
2 Applications
• Primary Side Telecom
• Secondary Side Synchronous Rectifier
• Motor Control
3 Description
This 100 V, 7.8 mΩ, SON 5 mm × 6 mm NexFET™
power MOSFET is designed to minimize losses in
power conversion applications.
Top View
S1
8D
S2
7D
S3
G4
D
6D
5D
P0093-01
Device
CSD19533Q5A
CSD19533Q5AT
.
Ordering Information(1)
Media
Qty Package
13-Inch Reel 2500 SON 5 x 6 mm
7-Inch Reel 250 Plastic Package
Ship
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current (Package limited)
VALUE
100
±20
100
UNIT
V
V
ID
Continuous Drain Current (Silicon limited),
TC = 25°C
Continuous Drain Current, TA = 25 °C(1)
IDM Pulsed Drain Current, TA = 25 °C(2)
Power Dissipation(1)
PD Power Dissipation, TC = 25°C
75
13
231
3.2
96
TJ, Operating Junction and
Tstg Storage Temperature Range
–55 to 150
EAS
Avalanche Energy, single pulse
ID = 46 A, L = 0.1 mH, RG = 25
106
A
A
W
°C
mJ
(1) Typical RθJA = 40 °C/W on a 1-inch2, 2-oz. Cu pad on a
0.06-inch thick FR4 PCB.
(2) Max RθJC = 1.3°C/W, pulse duration 100 μs, duty cycle 1%
RDS(on) vs VGS
30
27
TC = 25°C,I D = 13A
TC = 125°C,I D = 13A
24
21
18
15
12
9
6
3
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to- Source Voltage (V)
G001
Gate Charge
10
9
ID = 13A
VDS = 50V
8
7
6
5
4
3
2
1
0
036
9 12 15 18 21 24 27 30
Qg - Gate Charge (nC)
G001
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.

CSD19533Q5A
CSD19533Q5A
SLPS486A – DECEMBER 2013 – REVISED MAY 2014
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics.......................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6 Device and Documentation Support.................... 7
6.1 Trademarks ............................................................... 7
6.2 Electrostatic Discharge Caution ................................ 7
6.3 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 Q5A Package Dimensions ........................................ 9
7.2 Recommended PCB Pattern................................... 10
7.3 Recommended Stencil Opening ............................. 11
7.4 Q5A Tape and Reel Information ............................. 11
4 Revision History
Changes from Original (December 2013) to Revision A
Page
• Added small reel order number .............................................................................................................................................. 1
• Increased pulsed drain current to 231A ................................................................................................................................ 1
• Added line for max power dissipation with case temperature held to 25°C .......................................................................... 1
• Updated the pulsed drain current conditions ......................................................................................................................... 1
• Fixed y-axis on Figure 1 to state that it is a normalized RθJC curve ...................................................................................... 4
• Updated the safe operating area in Figure 10 ....................................................................................................................... 6
2 Submit Documentation Feedback
Copyright © 2013–2014, Texas Instruments Incorporated
Product Folder Links: CSD19533Q5A


Features Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD19533Q5A SLPS486A – DEC EMBER 2013 – REVISED MAY 2014 CSD1953 3Q5A 100 V N-Channel NexFET™ Power MO SFET 1 Features •1 Ultra-Low Qg and Qgd • Low Thermal Resistance • Aval anche Rated • Pb-Free Terminal Platin g • RoHS Compliant • Halogen Free SON 5-mm × 6-mm Plastic Package Pr oduct Summary TA = 25°C VDS Drain-to- Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate to Drain RDS(o n) Drain-to-Source On Resistance VGS(th ) Threshold Voltage TYPICAL VALUE 100 27 4.9 VGS = 6 V VGS = 10 V 2.8 8. 7 7.8 UNIT V nC nC mΩ mΩ V 2 Appl ications • Primary Side Telecom • S econdary Side Synchronous Rectifier • Motor Control 3 Description This 100 V , 7.8 mΩ, SON 5 mm × 6 mm NexFET™ p ower MOSFET is designed to minimize los ses in power conversion applications. T op View S1 8D S2 7D S3 G4 D 6D 5 D P0093-01 Device CSD19533Q5A CSD19533Q5AT . Ordering Information(1) Media Qty Package 13-Inch.
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